2N5191 2N5192 MEDIUM POWER NPN SILICON TRANSISTORS ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP type of 2N5192 is 2N5195. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5191 2N5192 Unit 80 V 80 V V CBO Collector-Base Voltage (I E = 0) 60 V CEO Collector-Emitter Voltage (I B = 0) 60 V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 4 A Collector Peak Current 7 A Base Current 1 A 40 W IC I CM IB P tot Total Dissipation at T c ≤ 25 o C T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/4 2N5191 / 2N5192 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Max. Unit 0.1 mA 0.1 2 mA mA V CE = rated V CEO 1 mA V EB = 5 V 1 mA I CBO Collector Cut-off Current (I E = 0) V CB = rated V CBO I CEX Collector Cut-off Current (V BE = -1.5V) V CE = rated V CEO V CE = rated V CEO I CEO Collector Cut-off Current (I B = 0) I EBO Emitter Cut-off Current (I C = 0) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ I C = 1.5 A IC = 4 A V BE ∗ Base-Emitter Voltage I C = 1.5 A h FE ∗ DC Current Gain I C = 1.5 A for 2N5191 for 2N5192 IC = 4 A for 2N5191 for 2N5192 VCE = 2 V IC = 1 A V CE = 10 V Transition frequency Typ. 60 80 Collector-Emitter Saturation Voltage fT 2/4 T c = 125 o C I C = 100 mA for 2N5191 for 2N5192 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Min. I B = 0.15 A IB = 1 A V CE = 2 V 25 20 V V 0.6 1.4 V V 1.2 V 100 80 V CE = 2 V 10 7 2 MHz 2N5191 / 2N5192 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 3/4 2N5191 / 2N5192 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4