STPS160H100TV HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM 2 x 80 A 100 V Tj (max) 150 °C VF (max) 0.68 V K2 A2 K1 A1 FEATURES AND BENEFITS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP AVALANCHERATED LOW INDUCTION PACKAGE INSULATED PACKAGE: Insulating Voltage = 2500 V(RMS) Capacitance = 45 pF ISOTOPTM DESCRIPTION High voltage dual Schottky rectifier designed for high frequency telecom and computer Switched Mode Power Supplies and other power converters. Package d in ISOTOP, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current IF(AV) Average forward current Tc = 110°C δ = 0.5 IFSM IRRM Surge non repetitive forward current Repetitive peak reverse current tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz IRSM Non repetitive peak reverse current tp = 100 µs square Tstg Storage temperature range Tj dV/dt * : Per diode Per device Maximum operating junction temperature * Critical rate of rise of reverse voltage Value Unit 100 180 V A 80 160 A 1000 2 A A 10 - 55 to+ 150 A °C 150 °C 10000 V/µs 1 dPtot < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj July 1999 - Ed: 2A 1/4 STPS160H100TV THERMAL RESISTANCES Symbol Parameter Junction to case Rth (j-c) Rth (c) Value Unit Per leg 0.9 °C/W Total 0.5 °C/W 0.14 °C/W Coupling When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter IR * Reverse leakage Current VF** Tests Conditions Forward Voltage drop Min. Typ. Max. Unit µA 13 40 50 0.59 0.75 0.63 Tj = 25°C Tj = 125°C VR = VRRM Tj = 25°C Tj = 125°C IF = 60 A IF = 60 A Tj = 25°C IF = 80 A Tj = 125°C Tj = 25°C IF = 80 A IF = 120 A 0.63 0.68 0.87 Tj = 125°C IF = 120 A 0.69 0.74 Tj = 25°C Tj = 125°C IF = 160 A IF = 160 A 0.75 0.92 0.80 mA V 0.80 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% Pulse test : To evaluate the conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0015 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode). PF(av)(W) IF(av)(A) 80 70 δ = 0.05 δ = 0.1 δ = 0.2 100 δ = 0.5 Rth(j-a)=Rth(j-c) 80 60 50 δ=1 60 40 T T 20 20 10 0 Rth(j-a)=2°C/W 40 30 IF(av) (A) 0 2/4 20 40 60 δ=tp/T 80 δ=tp/T tp 100 0 0 25 Tamb(°C) tp 50 75 100 125 150 STPS160H100TV Fig. 3: Non repetitive surgepeak forward current versus overloadduration(maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) IM(A) 600 1.0 500 0.8 400 0.6 300 δ = 0.5 Tc=50°C 0.4 200 Tc=90°C IM 100 t δ = 0.2 T δ = 0.1 0.2 Single pulse t(s) δ =0.5 0 1E-3 δ=tp/T tp(s) 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-3 1E-2 1E-1 tp 1E+0 5E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode) . IR(mA) C(nF) 5E+1 10.0 1E+1 F=1MHz Tj=25°C Tj=125°C 1E+0 1.0 1E-1 1E-2 1E-3 Tj=25°C VR(V) 0 10 20 30 40 50 60 70 80 90 100 0.1 VR(V) 1 2 5 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 Tj=125°C 100 Tj=25°C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/4 STPS160H100TV PACKAGE MECHANICAL DATA ISOTOPTM DIMENSIONS REF. Millimeters Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Cooling method: C Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Ordering type Marking STPS160H100TV STPS160H100TV Package Weight Base qty Delivery mode ISOTOP 27g without screws 10 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4