STT3PF30L P-CHANNEL 30V - 0.14 Ω - 3A SOT23-6L STripFET™ II POWER MOSFET ■ ■ ■ TYPE VDSS RDS(on) ID STT3PF30L 30 V <0.165 Ω 3A TYPICAL RDS(on) = 0.14 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ■ CELLULAR SOT23-6L INTERNAL SCHEMATIC DIAGRAM MARKING ■ STA3 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 30 V 30 V ± 16 V A ID Drain Current (continuous) at TC = 25°C 2.4 ID Drain Current (continuous) at TC = 100°C 1.5 A Drain Current (pulsed) 10 A 1.6 W IDM(•) Total Dissipation at TC = 25°C Ptot (•) Pulse width limited by safe operating area. September 2002 . Value Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 STT3PF30L THERMAL DATA Rthj-amb Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient (**)Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max Max 78 156 -55 to 150 -55 to 150 °C/W °C/W °C °C (*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board (**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 1.5 A ID = 1.5 A Min. Typ. Max. Unit 1 1.6 2.5 V 0.14 0.16 0.165 0.2 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS=25 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz, VGS = 0 ID = 1.5 A Min. 4 S 420 95 30 pF pF pF STT3PF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time ID = 1.5 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 24V ID= 3A VGS=4.5V (see test circuit, Figure 2) Min. Typ. Max. 14.5 37 Unit ns ns 4.8 1.7 2 7 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 1.5 A VDD = 15 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 90 23 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 3 A Min. Typ. VGS = 0 di/dt = 100A/µs ISD = 3 A VDD = 15 V Tj = 150°C (see test circuit, Figure 3) 35 25 1.5 Max. Unit 3 12 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STT3PF30L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STT3PF30L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STT3PF30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STT3PF30L SOT23-6L MECHANICAL DATA mm DIM. MIN. mils TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 e A1 b L c E e1 D E1 7/8 STT3PF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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