2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 60V 7.5Ω 500mA Order Number / Package TO-92 2N7008 Features Advanced DMOS Technology ■ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ■ Low power drive requirement ■ Ease of paralleling ■ Low CISS and fast switching speeds ■ Excellent thermal stability ■ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ■ High input impedance and high gain ■ Complementary N- and P-channel devices Applications ■ Motor controls Package Options ■ Converters ■ Amplifiers ■ Switches ■ Power supply circuits ■ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 30V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 7-15 2N7008 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C θjc °C/W θja °C/W IDR* IDRM 230mA 1.3A 1W 125 170 230mA 1.3A TO-92 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage 60 VGS(th) Gate Threshold Voltage 1 IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance Typ Max Unit Conditions V ID = -10µA, VGS = 0V 2.5 V VGS = VDS, ID = 250µA 100 nA VGS = ±30V, VDS = 0V 1 µA VGS = 0V, VDS = 50V 500 µA VGS = 0V, VDS = 50V TA = 125°C mA VGS = 10V, VDS ≥ 2VDS(ON) 500 7.5 7.5 GFS Forward Transconductance CISS Input Capacitance 50 COSS Common Source Output Capacitance 25 CRSS Reverse Transfer Capacitance 5 t(ON) Turn-ON Time 20 t(OFF) Turn-OFF Time 20 VSD Diode Forward Voltage Drop 1.5 VGS = 5V, ID = 50mA Ω 80 m VGS = 10V, ID = 500mA Ω Symbol VDS = 10V, ID = 0.2A pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 30V, ID =200 mA, RGEN = 25Ω V ISD = 150mA, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-16