TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS(ON) VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† 40V 1.0Ω 1.6V 4.0A TN2504N8 TN2504ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available. Product marking for TO-243AA: TN5L❋ Features Where ❋ = 2-week alpha date code ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. Low Threshold DMOS Technology ❏ Fast switching speeds These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays Package Option ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches D G D S Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-243AA (SOT-89) -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2504 Thermal Characteristics Package ID (continuous)* TO-243AA * ID (pulsed) 0.89A Power Dissipation @ TA = 25°C θjc θja °C/W °C/W 1.6W† 15 78† 4.5A IDR* IDRM 0.89A 4.5A ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P increase possible on ceramic substrate. D Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min Typ BVDSS Drain-to-Source Breakdown Voltage 40 VGS(th) Gate Threshold Voltage 0.6 ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) -3.8 ON-State Drain Current RDS(ON) 1.0 1.7 4.0 4.5 Static Drain-to-Source ON-State Resistance Max Conditions V VGS = 0V, ID = 2mA 1.6 V VGS = VDS, ID= 1mA -4.5 mV/°C VGS = VDS, ID= 1mA 100 nA VGS = ± 20V, VDS = 0V 10 µA VGS = 0V, VDS = Max Rating 1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C A VGS = 5V, VDS = 15V VGS = 10V, VDS = 15V 1.25 1.5 0.8 1.0 ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 GFS Forward Transconductance CISS Input Capacitance 70 125 COSS Common Source Output Capacitance 50 70 CRSS Reverse Transfer Capacitance 20 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 13 VSD Diode Forward Voltage Drop 1.2 trr Reverse Recovery Time 300 0.5 Unit Ω VGS = 5V, ID = 300mA VGS = 10V, ID = 1.5A %/°C VGS = 10V, ID = 1.5A Ω Symbol VDS = 15V, ID = 2.0A pF VGS = 0V, VDS = 20V f = 1 MHz ns VDD = 20V, ID = 500mA, RGEN = 25Ω V VGS = 0V, ISD = 1.5A ns VGS = 0V, ISD = 1A 0.7 1.8 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 TN2504 Typical Performance Curves -/ 0 - -/ 0 - - 1( $& 1( $& - -( $'#& " '! ( ! - - ! -( $'#& )* ( '! + " " 0 .° ° ° 1( $& ". $#& ". ! -( $'#& , " $°& ! " 0 ° $(& "# ! ! ". ! ! 1( $& )( $*& ! "# $#%& /2 $& -( 0 - ! ! ! ! ! 3 ". )( 0 !3 " 0 ° ! ! ) $ & TN2504 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 2.0 1.1 RDS(ON) (ohms) BVDSS (normalized) VGS = 5V 1.0 VGS = 10V 1.0 0.9 0 -50 0 50 100 0 150 1 2 3 4 Tj (°C) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 5 10 1.6 1.4 6 VGS(th) (normalized) ID (amperes) RDS @ 10V, 1.5A TA = -55°C 25°C 4 1.4 1.2 V(th) @ 1mA 1.2 1.0 1.0 0.8 2 0.8 125°C 0.6 0 0.6 0 2 4 6 8 10 -50 0 50 100 VGS (volts) Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 150 10 100 f = 1MHz VDS = 10V 8 75 130 pF CISS VGS (volts) C (picofarads) RDS(ON) (normalized) VDS = 15V 8 50 COSS 6 4 VDS = 40V 25 2 CRSS 60 pF 0 0 0 10 20 30 40 0 0.4 0.8 1.2 1.6 2.0 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com