TN2535 Low Threshold New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 10Ω 2.0V 1.0A TN2535N8 * Same as SOT-89. TO-243AA* Product supplied on 2000 piece carrier tape reels. Features Product marking for TO-243AA ❏ Low threshold TN5S❋ ❏ High input impedance Where ❋ = 2-week alpha date code ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds Low Threshold DMOS Technology ❏ Low on resistance ❏ Free from secondary breakdown These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. ❏ Low input and output leakage Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers Package Option ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* D G D S TO-243AA (SOT-89) -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2535 Thermal Characteristics Package ID (continuous)* TO-243AA ID (pulsed) 283mA Power Dissipation @ TA = 25°C θjc θja °C/W °C/W 15 78† 1.6W† 1.6A IDR* IDRM 283mA 1.6A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Typ Max 350 1.0 Unit Conditions V VGS = 0V, ID = 250µA 2.0 V VGS = VDS, ID= 1mA VGS = VDS, ID= 1mA VGS(th) Gate Threshold Voltage ∆VGS(th) Change in VGS(th) with Temperature -4.0 mV/°C IGSS Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1.0 µA VGS = 0V, VDS = Max Rating ID(ON) ON-State Drain Current A VGS = 4.5V, VDS = 25V 0.5 1.0 RDS(ON) VGS = 10V, VDS = 25V Static Drain-to-Source ON-State Resistance 15 10 VGS = 3.0V, ID = 20mA Ω 10 Change in RDS(ON) with Temperature 0.75 GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance 70 CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 20 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 125 VGS = 10V, ID = 200mA %/°C VGS = 10V, ID = 200mA Ω ∆RDS(ON) VGS = 4.5V, ID = 100mA VDS = 25V, ID = 100mA m 125 300 pF VDD = 25V, ns ID = 200mA, RGEN = 25Ω V VGS = 0V, ISD = 200mA ns VGS = 0V, ISD = 200mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 TN2535 Typical Performance Curves Output Characteristics Saturation Characteristics 1.2 2.0 VGS = 10V VGS=10V 8.0V 6.0V VGS=8V 5.0V VGS=6V ID (Amperes) ID (Amperes) 1.6 1.0 VGS=5V 1.2 VGS=4V 0.8 VGS = 4.0V 0.6 0.8 0.4 VGS = 3.0V 0.4 0.2 VGS=3V 0.0 0.0 0 10 20 30 40 50 0 2 4 6 8 10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 0.8 2.0 V DS =15V T 0.6 A =-55¡C PD (Watts) GFS (Siemens) TO-243AA 1.6 0.4 T A =25¡C 1.2 0.8 0.2 0.4 T A =125¡C 0.0 0.0 0.0 0.4 0.8 1.2 1.6 0 50 75 100 125 TA (¡C) Maximum Rated Safe Operating Area Thermal Response Characteristics 150 1.0 10 A =25¡C Thermal Resistance (normalized) T TO-243AA (Pulsed) ID (Amperes) 25 ID (Amperes) 1.0 TO-243AA (DC) 0.1 0.01 0.8 0.6 TO-243AA ° TA = 2 5 C 0.4 PD = 1 . 6 W 0.2 0 1 10 100 1000 0.001 VDS (Volts) 0.01 0.1 tp (seconds) 3 1 10 TN2535 Typical Performance Curves - ), ,( 3 4 )) )( (+ )2 ), ( '( )(( # $ ( (( )'( % ), ,( 3 ,'$ 3 ),'$ ), (* (1 ( , 1 2 * )) ! (* )(( '( 4( ,( (+ ), (* (* . )(6 (, ( '( )(( # $ (1 )'( 3 ,*4 3)( 31( 2 ,+'9 1 , ,( ,1 . ) * )'( )( ,( )2 )( % 3 )78" ( )2 : !0 ), )( (5 &'( )( (1 3 )' ,(( % !" 3 &''$ ! )2 ( 3 )( * 1 (* &'( (( 3 1' !" - !" - . ,'(/ ( (( 1( +,9 (1 (* ), )2 ,( ; !< ! 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com