TP0620 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) VGS(th) (max) Order Number / Package -200V 12Ω -0.75A -2.4V TP0620N3 TO-92 MIL visual screening available Features Low Threshold DMOS Technology ❏ Low threshold — -2.4 V max These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ High input impedance ❏ Low input capacitance — 85pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Logic level interfaces – ideal for TTL and CMOS Package Option ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. TP0620 Thermal Characteristics Package TO-92 ID (continuous)* ID (pulsed) -175mA Power Dissipation @ TC = 25°C θjc θja °C/W °C/W 1W 125 170 -0.8A IDR* IDRM -175mA -0.8A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage -200 VGS(th) Gate Threshold Voltage -1.0 ∆V GS(th) Typ Max Unit V Conditions VGS = 0V, ID = -2.0mA -2.4 V VGS = VDS, ID = -1.0mA Change in VGS(th) with Temperature -4.5 mV/°C VGS = VDS, ID = -1.0mA IGSS Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µA VGS = 0V, VDS = Max Rating -1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.25 A -0.75 Static Drain-to-Source ON-State Resistance VGS = -10V, VDS = -25V 9.0 15 7.0 12 ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 GFS Forward Transconductance CISS Input Capacitance 85 150 COSS Common Source Output Capacitance 30 85 CRSS Reverse Transfer Capacitance 10 35 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 16 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 100 150 Ω %/°C m Ω RDS(ON) VGS = -5V, VDS = -25V VGS = -5V, ID = -0.1A VGS = -10V, ID = -0.2A VGS = -10V, ID = -0.2A VDS = -25V, ID = -0.4A pF VGS = 0V, VDS = -25V f = 1 MHz ns VDD = -25V ID = -0.75A RGEN = 25Ω V VGS = 0V, ISD = -0.5A ns VGS = 0V, ISD = -0.5A -1.8 300 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 TP0620 Typical Performance Curves 1 / 1 / 0, (!* 0, (!* , (+'* , (+'* -. , + ! # + , , / & / ° & / ° -, (.* 12 (!* & / ° 0, (!* !' " !! "# $ % & !' " (!')#* 0, (!* (°* (,* / ° , (+'* 3 -, / 3 / ° (#* TP0620 Typical Performance Curves On-Resistance vs. Drain Current 1.15 20 1.1 16 RDS(ON) (ohms) 1.05 1.0 0.95 VGS = -5V 12 8 4 0.9 0 -50 0 50 100 0 150 -0.2 -0.4 Tj (°C) -0.6 -0.8 -1.0 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 1.2 1.66 1.1 1.33 C -2.0 T A = 25 °C T VGS(th) (normalized) A = -5 5° VDS = -25V ID (amperes) VGS = -10V -1.0 0° = C 15 TA RDS(ON) @ -10V, -0.2A 1.0 1.0 0.66 0.9 V(th) @ -1mA 0.33 0.8 0 0.7 0 -2 -4 -6 -8 0 -50 -10 RDS(ON) (normalized) BVDSS (normalized) BVDSS Variation with Temperature 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage 0 Gate Drive Dynamic Characteristics 200 -10 f = 1MHz -8 VDS = -10V 170 pF VGS (volts) C (picofarads) 150 CISS 100 -6 VDS = -40V -4 50 -2 COSS CRSS 65 pF 0 0 0 -10 -20 -30 -40 VDS (volts) 0 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. 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