SUPERTEX TP2435N8

TP2435
Low Threshold
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
*
Order Number / Package
BVDSS /
RDS(ON)
VGS(th)
ID(ON)
BVDGS
(max)
(max)
(min)
TO-243AA*
Die**
-350V
15Ω
-2.4V
-800mA
TP2435N8
TP2435NW
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
** Die in wafer form.
Product marking for TO-243AA:
TP4S❋
where ❋ = 2-week alpha date code
Low Threshold DMOS Technology
Features
These low threshold enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Complementary N- and P-channel devices
Applications
Logic level interfaces
Solid state relays
Package Option
Linear Amplifiers
Power Management
Analog switches
Telecom switches
D
G
D
S
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
TO-243AA
(SOT-89)
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products,
TP2435
Thermal Characteristics
Package
ID (continuous)*
TO-243AA
ID (pulsed)
-231mA
Power Dissipation
θjc
θja
@ TA = 25°C
°C/W
°C/W
1.6W†
15
78†
-1.1A
IDR*
IDRM
-231mA
-1.1A
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
BVDSS
Drain-to-Source
Breakdown Voltage
-350
VGS(th)
Gate Threshold Voltage
-1.0
∆VGS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(ON)
ON-State Drain Current
Max
Conditions
V
VGS = 0V, ID = -250µA
-2.4
V
VGS = VDS, ID= -1.0mA
4.5
mV/°C
VGS = VDS, ID= -1.0mA
-100
nA
VGS = ± 20V, VDS = 0V
-10.0
µA
VGS = 0V, VDS = Max Rating
-1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
-0.3
A
-0.8
RDS(ON)
Unit
Static Drain-to-Source
ON-State Resistance
15
15
Ω
1.7
GFS
Forward Transconductance
CISS
Input Capacitance
COSS
Common Source Output Capacitance
70
CRSS
Reverse Transfer Capacitance
25
td(ON)
Turn-ON Delay Time
15
tr
Rise Time
20
125
VGS = -4.5V, ID = -150mA
VGS = -10V, ID = -500mA
%/°C
VGS = -10V, ID = -150mA
Ω
Change in RDS(ON) with Temperature
VGS = -10V, VDS = -25V
VGS = -3.0V, ID = -20mA
15
∆RDS(ON)
VGS = -4.5V, VDS = -25V
VDS = -25V, ID = -350mA
m
200
td(OFF)
Turn-OFF Delay Time
25
tf
Fall Time
50
VSD
Diode Forward Voltage Drop
trr
Reverse Recovery Time
-1.5
300
pF
VGS = 0V, VDS = -25V
f = 1.0 MHz
ns
VDD = -25V,
ID = -250mA,
RGEN = 25Ω
V
VGS = 0V, ISD = -750mA
ns
VGS = 0V, ISD = -750mA
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
PULSE
GENERATOR
INPUT
90%
-10V
t(ON)
td(ON)
Rgen
t(OFF)
td(OFF)
tr
tF
D.U.T.
0V
90%
OUTPUT
INPUT
90%
RL
OUTPUT
VDD
10%
10%
VDD
2
TP2435
Typical Performance Curves
Output Characteristics
Saturation Characteristics
-1.0
-1.8
VGS=-10V
VGS = -10V
-1.5
-0.8
ID (Amperes)
ID (Amperes)
VGS=-6V
-1.2
VGS=-4.5V
-0.9
-6.0V
-4.5V
-0.6
-3.5V
-0.4
VGS=-3.5V
-3.0V
-0.6
VGS=-3V
-0.2
-0.3
-0.0
-0.0
0
-10
-20
-30
0
-40
-2
-4
-6
-8
-10
VDS (Volts)
VDS (Volts)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
1.0
2.0
V
DS
=-15V
TO-243AA
1.6
T
A
PD (Watts)
GFS (Siemens)
0.8
=-55¡C
0.6
T
A
=25¡C
0.4
1.2
0.8
T
A
=125¡C
0.2
0.4
0.0
0.0
0
-100
-200
-300
-400
-500
0
25
50
ID (Milliamperes)
Maximum Rated Safe Operating Area
125
150
Thermal Response Characteristics
1.0
A
=25¡C
Thermal Resistance (normalized)
T
TO-243AA (Pulsed)
ID (Amperes)
100
TA (¡C)
-1.0
-0.1
TO-243AA (DC)
-0.01
-0.001
-1
75
0.8
0.6
TO-243AA
°
TA = 2 5 C
0.4
PD = 1 . 6 W
0.2
0
-10
-100
-1000
0.001
VDS (Volts)
0.01
0.1
tp (seconds)
3
1
10
TP2435
Typical Performance Curves
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11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com