VN0645 VN0650 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-39 TO-92 Die† 450V 16Ω 0.5A VN0645N2 — — 500V 16Ω 0.5A — VN0650N3 VN0650ND † MIL visual screening available Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. The VN0650 is NOT recommended for new designs. Please use VN2450 instead. Features These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ■ Free from secondary breakdown ■ Low power drive requirement ■ Ease of paralleling ■ Low CISS and fast switching speeds ■ Excellent thermal stability Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ■ Integral Source-Drain diode ■ High input impedance and high gain ■ Complementary N- and P-channel devices Applications Package Options ■ Motor controls ■ Converters ■ Amplifiers ■ Switches ■ Power supply circuits ■ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings DGS Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-39 Case: DRAIN SGD TO-92 -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 7-175 7 VN0645/VN0650 Thermal Characteristics ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C °C/W °C/W θja IDR* IDRM TO-39 0.4A 1.5A 6W 21 125 0.4A 1.5A TO-92 0.2A 1.0A 1W 125 170 0.2A 1.0A Package θjc * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage VN0650 500 VN0645 450 Typ 2 Max Unit V VGS = 0V, ID = 2mA V VGS = VDS , ID = 2mA VGS = VDS , ID = 2mA VGS(th) Gate Threshold Voltage ∆VGS(th) Change in VGS(th) with Temperature -4.5 mV/°C IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µA VGS = 0V, VDS = Max Rating 1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ON-State Drain Current 0.8 0.5 RDS(ON) A 1.1 12 Static Drain-to-Source ON-State Resistance 11 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS Ω 16 0.75 100 130 Common Source Output Capacitance 20 75 CRSS Reverse Transfer Capacitance 10 20 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 10 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time VGS = 10V, VDS = 25V VGS = 5V, ID = 100mA VGS = 10V, ID = 400mA %/°C VGS = 10V, ID = 400mA VDS = 25V, ID = 400mA m 120 VGS = 5V, VDS = 25V Ω ID(ON) 4 Conditions pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V, ID = 0.5A, RGEN = 25Ω V VGS = 0V, ISD = 0.4A ns VGS = 0V, ISD = 0.4A 300 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-176 VN0645/VN0650 Typical Performance Curves Output Characteristics Saturation Characteristics 2.0 1.0 VGS = 6V to 10V ID (amperes) ID (amperes) VGS = 6V to 10V 1.0 5V 4V 0.5 4V 3V 3V 0 0 0 10 20 30 40 50 0 2 4 6 8 10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 0.3 50 VDS = 25V TA = -55°C 40 TA = 25°C 0.18 PD (watts) GFS (siemens) 0.24 TA = 150°C 0.12 30 20 0.06 10 0 0 TO-39 TO-92 0 0.2 0.4 0.6 0.8 0 1.0 25 50 ID (amperes) 100 125 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) 1.0 TO-39 (pulsed) ID (amperes) 75 TC (°C) 1.0 TO-39 (DC) 0.1 TO-92 (DC) 0.8 0.6 0.4 TO-39 PD = 6W TC = 25°C 0.2 TO-92 P D = 1W T C = 25°C TC = 25°C 0 0.001 0.01 1 10 100 1000 VDS (volts) 0.01 0.1 tp (seconds) 7-177 1 10 7 VN0645/VN0650 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 30 1.1 RDS(ON) (ohms) BVDSS (normalized) 1.0 VGS = 10V VGS = 5V 24 18 12 6 0.9 0 -50 0 50 100 150 0 0.3 0.6 0.9 1.2 1.5 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 1.0 RDS @ 10V, 400mA 1.4 VDS = 25V 25°C VGS(th) (normalized) ID (amperes) 150°C 0.5 1.2 1.2 1.0 0.8 0.8 V(th) @ 2mA 0.4 0.6 0 0 2 4 6 8 10 -50 0 50 VGS (volts) 100 0 150 Tj(°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 200 f = 1MHz VDS = 10V 8 VGS (volts) C (picofarads) 150 CISS 100 VDS = 40V 6 179 pF 4 50 COSS 2 110 pF CRSS 0 0 0 10 20 30 0 40 0.5 1.0 1.5 QG (nanocoulombs) VDS (volts) 7-178 2.0 2.5 RDS(ON) (normalized) 1.6 TA = -55°C