VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-92 Die† -40V 8.0Ω -0.5A VP0104N3 — -60V 8.0Ω -0.5A VP0106N3 — -90V 8.0Ω -0.5A VP0109N3 VP0109ND Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications Package Option ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) SGD TO-92 Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* Note: See Package Outline section for dimensions. -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. 07/08/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP0104/VP0106/VP0109 Thermal Characteristics Package ID (continuous)* TO-92 ID (pulsed) -0.25A Power Dissipation @ TC = 25°C θjc θja °C/W °C/W 1.0W 125 170 -0.8A IDR* IDRM -0.25A -0.8A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min Drain-to-Source VP0109 -90 Breakdown Voltage VP0106 -60 VP0104 -40 VGS(th) Gate Threshold Voltage ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current -1.5 ON-State Drain Current ID(ON) RDS(ON) Typ ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance Conditions V ID = -1.0mA, VGS = 0V -3.5 V VGS = VDS, ID = -1.0mA 6.5 mV/°C ID = -1.0mA, VGS = VDS -1.0 -100 nA VGS = ±20V, VDS = 0V -10 µA VGS = 0V, VDS = Max Rating -1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C -0.25 -0.50 -1.2 150 Unit 5.8 -0.15 Static Drain-to-Source ON-State Resistance Max A VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V 11 15 6.0 8.0 0.55 1.0 Ω %/°C 190 CISS Input Capacitance 45 60 Common Source Output Capacitance 22 30 CRSS Reverse Transfer Capacitance 3 8 td(ON) Turn-ON Delay Time 4 6 tr Rise Time 3 10 td(OFF) Turn-OFF Delay Time 8 12 tf Fall Time 4 10 VSD Diode Forward Voltage Drop -1.2 -2.0 trr Reverse Recovery Time 400 VGS = -10V, ID = -0.5A VGS = -10V, ID = -0.5A VDS = -25V, ID = -0.5A pF VGS = 0V, VDS = -25V f = 1 MHz m COSS VGS = -5V, ID = -0.1A Ω Symbol BVDSS VDD = -25V ns ID = -0.5A RGEN = 25Ω V ISD = -1.0A, VGS = 0V ns ISD = -1.0A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 VP0104/VP0106/VP0109 Typical Performance Curves Output Characteristics Saturation Characteristics -2.0 -1.0 VGS = -10V -0.8 VGS = -10V ID (amperes) ID (amperes) -1.6 -1.2 -0.8 -8V -8V -0.6 -0.4 -6V -0.4 -0.2 -6V -4V -4V 0 0 0 -10 -20 -30 -40 -50 0 -4 -6 -8 -10 VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 250 2.0 VDS = -25V TA= -55°C TA = 25°C 200 TA = 125°C 150 PD (watts) GFS (millisiemens) -2 VDS (volts) 100 TO-92 1.0 50 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 25 50 ID (amperes) 100 150 1.0 Thermal Resistance (normalized) -10 -1.0 TO-92(DC) -0.1 0.8 0.6 0.4 0.2 TO-92 P D = 1W T C = 25°C -0.01 -0.1 125 Thermal Response Characteristics Maximum Rated Safe Operating Area ID (amperes) 75 TC (°C) -1.0 -10 0 0.001 -100 VDS (volts) T C = 25°C 0.01 0.1 tp (seconds) 3 1 10 VP0104/VP0106/VP0109 Typical Performance Curves On-Resistance vs. Drain Current 50 1.06 40 RDS(ON) (ohms) 1.02 0.98 VGS = -5V VGS = -10V 30 20 10 0.94 0.90 0 -50 0 50 100 0 150 -0.3 -0.6 -0.9 -1.2 -1.5 ID (amperes) Tj (°C) V(th) and RDS Variation with Temperature Transfer Characteristics 1.6 -1.0 TA = -55°C -0.8 1.4 TA = 25°C VGS(th) (normalized) ID (amperes) 1.6 RDS(ON) @ -10V, -0.5A VDS = -25V -0.6 TA = 125°C -0.4 RDS(ON) @ -5V, 0.1A 1.4 1.2 V(th) @ -1.0mA 1.2 1.0 1.0 RDS(ON) (normalized) BVDSS (normalized) BVDSS Variation with Temperature 1.10 0.8 -0.2 0.8 0.6 0 0 -2 -4 -6 -8 -50 -10 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 100 -10 f = 1MHz VDS = -10V -8 70 pF 50 VGS (volts) C (picofarads) 75 CISS VDS = -40V -6 70 pF -4 COSS 25 -2 45pF CRSS 0 0 0 -10 -20 -30 -40 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) VDS (volts) 07/08/02 ©2002 Supertex Inc. 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