VP1304 VP1306 VP1310 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) Order Number / Package -40V 25Ω -0.25A VP1304N3 -60V 25Ω -0.25A VP1306N3 -100V 25Ω -0.25A VP1310N3 TO-92 Advanced DMOS Technology Features Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High input impedance and high gain Complementary N- and P-channel devices Applications Package Options Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings SGD Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-92 -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 7-251 9 VP1304/VP1306/VP1310 Thermal Characteristics Package TO-92 ID (continuous)* ID (pulsed) -0.15A -0.65A * ID (continuous) is limited by max rated Tj. θjc Power Dissipation @ TC = 25°C θja °C/W 1.0W °C/W 125 170 IDR* IDRM -0.15A -0.65A TA = 25°C Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter BVDSS Min Drain-to-Source Breakdown Voltage VP1310 -100 VP1306 -60 VP1304 -40 Typ -1.5 Max Unit Conditions V ID = -1mA, VGS = 0V -3.5 V VGS = VDS, ID = -1mA VGS(th) Gate Threshold Voltage ∆V GS(th) Change in VGS(th) with Temperature -3.2 -3.85 mV/°C VGS = VDS, ID = -1mA IGSS Gate Body Leakage -0.1 -100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 -500 -0.08 -0.23 -0.25 -0.7 A 32 40 19 25 ∆RDS(ON) Change in RDS(ON) with Temperature 0.8 1.1 GFS Forward Transconductance CISS Input Capacitance 20 35 COSS Common Source Output Capacitance 12 15 CRSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 3 5 td(OFF) Turn-OFF Delay Time 3 5 tf Fall Time 3 8 VSD Diode Forward Voltage Drop -1.2 -1.7 trr Reverse Recovery Time 350 75 VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V Static Drain-to-Source ON-State Resistance RDS(ON) µA 120 Ω %/°C m Ω ON-State Drain Current ID(ON) VGS = 0V, VDS = Max Rating pF VGS = -5V, ID = -50mA VGS = -10V, ID = -250mA VGS = -10V, ID = -250mA VDS = -25V, ID = -200mA VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns ID = -250mA RGEN = 25Ω V ISD = -0.25A, VGS = 0V ns ISD = -0.25A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 7-252 VP1304/VP1306/VP1310 Typical Performance Curves Output Characteristics Saturation Characteristics -0.5 -1.0 VGS = -10V -0.8 -0.4 VGS = -10V ID (amperes) ID (amperes) -8V -8V -0.6 -0.4 -6V -6V -0.3 -0.2 -4V -0.1 -0.2 -4V -3V -3V 0 0 0 -10 -20 -30 -40 0 -50 -2 -4 -6 -8 -10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 0.2 2.5 VDS = -25V 9 2.0 TA = 25°C PD (watts) GFS (siemens) TA= -55°C 0.1 TA = 125°C 1.5 1.0 TO-92 0.5 0 0 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 25 50 ID (amperes) 125 150 1.0 Thermal Resistance (normalized) ID (amperes) 100 Thermal Response Characteristics Maximum Rated Safe Operating Area -10 -1.0 TO-92 (pulsed) TO-92 (DC) -0.1 TA = 25°C -0.01 -0.1 75 TC (°C) -1.0 -10 0.5 TO-92 P D = 1W T C = 25°C 0 0.001 -100 0.01 0.1 tp (seconds) VDS (volts) 7-253 1.0 10 VP1304/VP1306/VP1310 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 100 1.1 VGS = -5V RDS(ON) (ohms) BVDSS (normalized) 80 1.0 60 VGS = -10V 40 20 0.9 0 -50 0 50 100 150 0 -0.2 -0.4 -0.6 -0.8 -1.0 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 -1.0 1.2 VDS = -25V TA = -55°C 25°C -0.6 125°C -0.4 1.1 1.2 1.0 0.8 0.9 0.4 -0.2 V(th) @ -1mA 0.8 0 0 0 -2 -4 -6 -8 -50 -10 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 40 f = 1MHz VDS = -10V -8 VGS (volts) C (picofarads) 30 CISS 20 -6 VDS = -40V 40 pF -4 COSS 10 -2 25 pF CRSS 0 0 0 -10 -20 -30 0 -40 0.1 0.2 0.3 QG (nanocoulombs) VDS (volts) 7-254 0.4 0.5 RDS(ON) (normalized) 1.6 VGS(th) (normalized) -0.8 ID (amperes) RDS(ON) @ -10V, -0.25A