VP3203 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) ID(ON) Order Number / Package BVDGS (max) (min) TO-92 TO-243AA* Die† -30V 0.6Ω -4.0A VP3203N3 VP3203N8 VP3203ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available. Product marking for TO-243AA: Features VP2L❋ ❏ Free from secondary breakdown Where ❋ = 2-week alpha date code ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds Advanced DMOS Technology ❏ Excellent thermal stability ❏ Integral Source-Drain diode These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor controls Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options D Absolute Maximum Ratings G Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* D S SGD TO-92 TO-243AA (SOT-89) -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP3203 Thermal Characteristics Package TO-92 ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25°C θjc °C/W θja °C/W IDR* IDRM -0.65A -4.0A 0.74W 125 170 -0.65A -4.0A -4.0A † -1.1A -4.0A TO-243AA * † -1.1A 1.6W 15 78 † ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min Typ BVDSS Drain-to-Source Breakdown Voltage -30 VGS(th) Gate Threshold Voltage -1.0 ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current -1.0 ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance Max Unit Conditions V VGS = 0V, ID = -10mA -3.5 V VGS = VDS, ID = -10mA -5.5 mV/°C VGS = VDS, ID = -10mA -100 nA VGS = ±20V, VDS = 0V -10 µA VGS = 0V, VDS = Max Rating -1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C -14 A VGS = -10V, VDS = -5V 1.0 Ω VGS = -4.5V, ID = -1.5A SOT-89 1.0 Ω VGS = -4.5V, ID = -0.75A TO-92 0.6 Ω VGS = -10V, ID = -3A SOT-89 0.6 Ω VGS = -10V, ID = -1.5A 1.0 %/°C VGS = -10V, ID = -1.5A TO-92 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 200 300 COSS Common Source Output Capacitance 100 120 CRSS Reverse Transfer Capacitance 45 60 td(ON) Turn-ON Delay Time tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 1.0 Ω Symbol VDS = -25V, ID = -2A pF VGS = 0V, VDS = -25V f = 1 MHz ns VDD = -25V ID = -2A RGEN = 10Ω 2.0 10 -1.6 300 V VGS = 0V, ISD = -1.5A ns VGS = 0V, ISD = -1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 VP3203 Typical Performance Curves Output Characteristics Saturation Characteristics -20 -20 VGS = -10V -12 VGS = -10V -16 ID (amperes) ID (amperes) -16 -8V -8 -8V -12 -8 -6V -6V -4 -4 -4V -4V -3V 0 0 -5 -10 -15 -20 -25 -3V 0 0 -30 -2 -4 -6 -8 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Temperature -10 2.0 5 VDS = -25V TO-243AA 1.6 3 PD (watts) GFS (siemens) 4 TA = 125°C TA = 25°C 2 TA = -55°C 1 1.2 TO-92 0.8 0.4 0 0 0 -1 -2 -3 -4 -5 0 25 50 ID (amperes) 125 100 150 Thermal Response Characteristics Maximum Rated Safe Operating Area -10 1.0 Thermal Resistance (normalized) TO-243AA (pulsed) TO-92 (pulsed) TO-243AA(DC) ID (amperes) 75 TA (°C) -1.0 TO-92 (DC) -0.1 TA = 25° C -0.01 -0.1 -1.0 -10 0.8 TO-243AA 0.6 0.4 0.2 0 0.001 -100 VDS (volts) TA = 25°C PD = 1.6W TO-92 P D = 1W T C = 25°C 0.01 0.1 tp (seconds) 3 1.0 10 VP3203 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 2.0 1.1 VGS = -5V RDS(ON) (ohms) BVDSS (normalized) 1.6 1.0 1.2 VGS = -10V 0.8 0.4 0.9 0 -50 0 50 100 150 0 -4 -8 -12 -16 -20 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature -10 1.4 TA = -55°C VDS = -25V 125°C -4 1.2 1.2 1.0 1.0 0.8 0.8 RDS(ON) (normalized) ID (amperes) VGS(th) (normalized) 25°C -8 -6 1.4 RDS(ON) @ -10V, -3A V(th) @ -10mA -2 0.6 0.6 0 0 -2 -4 -6 -8 -50 -10 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 300 f = 1MHz -8 VDS = -10V CISS VGS (volts) C (picofarads) 225 150 COSS -6 VDS = -20V 335pF -4 75 -2 CRSS 200 pF 0 0 -0 -10 -20 0 -30 1 2 3 4 5 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. 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