TC1426 TC1427 TC1428 1.2A DUAL HIGH-SPEED MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ Low Cost ■ Latch-Up Protected: Will Withstand 500 mA Reverse Output Current ■ ESD Protected ................................................... ±2 kV ■ High Peak Output Current ........................ 1.2A Peak ■ High Capacitive Load Drive Capability ...................................... 1000pF in 38nsec ■ Wide Operating Range ........................... 4.5V to 16V ■ Low Delay Time ...................................... 75nsec Max ■ Logic Input Threshold Independent of Supply Voltage ■ Output Voltage Swing to Within 25mV of Ground or VDD ■ Low Output Impedance ........................................ 8Ω The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other design and process refinements to increase their long-term reliability. The TC1426 is compatible with the bipolar DS0026, but only draws 1/5 of the quiescent current. The TC1426/27/28 are also compatible with the TC426/27/28, but with 1.2A peak output current rather than the 1.5A of the TC426/27/28 devices. Other compatible drivers are the TC4426/27/28 and the TC4426A/27A/28A. The TC4426/27/28 have the added feature that the inputs can withstand negative voltage up to 5V with diode protection circuits. The TC4426A/27A/28A have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 nanoseconds range. All of the above drivers are pin compatible. The high-input impedance TC1426/27/28 drivers are CMOS/TTL input-compatible, do not require the speed-up needed by the bipolar devices, and can be directly driven by most PWM ICs. This family of devices is available in inverting and noninverting versions. Specifications have been optimized to achieve low-cost and high-performance devices, well-suited for the high-volume manufacturer. APPLICATIONS ■ ■ ■ ■ ■ Power MOSFET Drivers Switched Mode Power Supplies Pulse Transformer Drive Small Motor Controls Print Head Drive PIN CONFIGURATIONS NC 1 8 NC IN A 2 GND 3 NC 1 8 NC 7 OUT A IN A 2 TC1426CPA 6 VDD IN B 4 GND 3 TC1427CPA 5 OUT B IN B 4 2, 4 8 NC 6 VDD GND 3 7 OUT A TC1428CPA 5 OUT B IN B 4 2, 4 7, 5 NC 1 7 OUT A IN A 2 7, 5 NC = NO CONNECTION NC 1 8 NC TC1426COA NC 1 8 NC 7 OUT A IN A 2 GND 3 6 VDD IN B 4 5 OUT B IN B 4 2, 4 2 7 4 5 NON-INVERTING INVERTING IN A 2 6 VDD 5 OUT B TC1427COA 6 VDD GND 3 8 NC TC1428COA 7, 5 5 OUT B Part No. Package Temp. Range 2 7 TC1426COA 8-Pin SOIC 0°C to +70°C 4 5 TC1426CPA 8-Pin Plastic DIP 0°C to +70°C TC1427COA 8-Pin SOIC 0°C to +70°C TC1427CPA 8-Pin Plastic DIP 0°C to +70°C TC1428COA 8-Pin SOIC 0°C to +70°C TC1428CPA 8-Pin Plastic DIP 0°C to +70°C NON-INVERTING INVERTING 3 4 5 6 ORDERING INFORMATION 7 OUT A 6 VDD GND 3 5 OUT B IN B 4 2, 4 7, 5 NC 1 7 OUT A IN A 2 1 NC = NO CONNECTION FUNCTIONAL BLOCK DIAGRAM V+ '500µA ' 2.5mA TC1426 INVERTING TC1427 NONINVERTING TC1428 INVERTING/NONINVERTING NONINVERTING OUTPUT INVERTING OUTPUT (TC1427) (TC1426) 8 INPUT GND NOTE: TC1428 has one inverting and one noninverting driver. Ground any unused driver input. TC1426/7/8-8 10/11/96 TELCOM SEMICONDUCTOR, INC. 7 4-207 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 ABSOLUTE MAXIMUM RATINGS* Power Dissipation (TA ≤ 70°C) Plastic DIP ...........................................................730W SOIC ................................................................ 470 mW Derating Factor Plastic DIP ..................................................... 8 mW/°C SOIC .............................................................. 4 mW/°C Supply Voltage ............................................................18V Input Voltage, Any Terminal .. (VDD + 0.3V) to (GND – 0.3V) Operating Temperature : C Version .............. 0°C to +70°C E Version ......... – 40°C to +85°C Maximum Chip Temperature ................................. +150°C Storage Temperature ............................. +65°C to +150°C Lead Temperature (Soldering ,10 sec) ................. +300°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD+ ≤ 16V unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1, Input Voltage 3 — — V VIL Logic 0, Input Voltage — — 0.8 V –1 — 1 µA IIN Input Current 0V ≤ VIN ≤ VDD Output VOH High Output Voltage Test Figures 1 and 2 VDD – 0.025 — — V VOL Low Output Voltage Test Figures 1 and 2 — — 0.025 V RO Output Resistance VIN = 0.8V, IOUT = 10 mA, VDD = 16V VIN = 3V, IOUT = 10 mA, VDD = 16V — 12 18 Ω — 8 12 — 1.2 — A > 500 — — mA IPK Peak Output Current I Latch-Up Current Withstand Reverse Current Switching Time (Note 1) tR Rise Time Test Figures 1 and 2 — — 35 nsec tF Fall Time Test Figures 1 and 2 — — 25 nsec tD1 Delay Time Test Figures 1 and 2 — — 75 nsec tD2 Delay Time Test Figures 1 and 2 — — 75 nsec VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — — — 9 0.5 mA Power Supply IS Power Supply Current Note: 1. Switching times guaranteed by design. 4-208 TELCOM SEMICONDUCTOR, INC. 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 1 ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD + ≤ 16V unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 2 Input VIH Logic 1, Input Voltage 3 — — V VIL Logic 0, Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA VOH High Output Voltage Test Figures 1 and 2 VDD – 0.025 — — V VOL Low Output Voltage Test Figures 1 and 2 — — 0.025 V RO Output Resistance VIN = 0.8V, IOUT = 10mA, VDD = 16V VIN = 3V, IOUT = 10mA, VDD = 16V — 15 23 Ω — 10 18 > 500 — — mA Output I Latch-Up Current Withstand Reverse Current 3 4 Switching Time (Note 1) tR Rise Time Test Figures 1 and 2 — — 60 nsec tF Fall Time Test Figures 1 and 2 — — 40 nsec tD1 Delay Time Test Figures 1 and 2 — — 125 nsec tD2 Delay Time Test Figures 1 and 2 — — 125 nsec VIN = 3V (Both Inputs) — — 13 mA VIN = 0V (Both Inputs) — — 0.7 Power Supply IS Power Supply Current 5 Note: 1. Switching times guaranteed by design. SUPPLY BYPASSING INPUT STAGE Large currents are required to charge and discharge capacitive loads quickly. For example, charging a 1000-pF load to 16V in 25nsec requires an 0.8A current from the device power supply. To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic MLC capacitors with short lead lengths (< 0.5-in.) should be used. A 1.0-µF film capacitor in parallel with one or two 0.1-µF ceramic MLC capacitors normally provides adequate bypassing. The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5 mA current source load. With a logic "1" input, the maximum quiescent supply current is 9mA. Logic "0" input level signals reduce quiescent current to 500 µA maximum. Unused driver inputs must be connected to VDD or GND. Minimum power dissipation occurs for logic "0" inputs for the TC1426/27/28. The drivers are designed with 100 mV of hysteresis. This provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresholds are approximately 1.5V, making logic "1" input any voltage greater than 1.5V up to VDD. Input current is less than 1µA over this range. The TC1426/27/28 may be directly driven by the TL494, SG1526/27, TC38C42, TC170 and similar switch-mode power supply integrated circuits. GROUNDING The TC1426 and TC1428 contain inverting drivers. Individual ground returns for the input and output circuits or a ground plane should be used. This will reduce negative feedback that causes degradation in switching speed characteristics. TELCOM SEMICONDUCTOR, INC. 4-209 6 7 8 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 Test Circuit Test Circuit VDD = 16V 1µF WIMA MKS-2 INPUT VDD = 16V 1 µF WIMA MKS-2 0.1µF MLC 1 OUTPUT INPUT 1 OUTPUT C L = 1000pF CL = 1000pF 2 2 TC1426 (1/2 TC1428) +5V TC1427 (1/2 TC1428) +5V 90% INPUT 0V VDD 10% tD1 tF tD2 0V tR 10% VDD 90% 90% tD1 90% tR OUTPUT 10% Figure 1. Inverting Driver Switching Time 4-210 90% INPUT OUTPUT 0V 0.1µF MLC 10% 0V 10% 90% tD2 tF 10% Figure 2. Non-Inverting Driver Switching Time TELCOM SEMICONDUCTOR, INC. 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 1 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage 550 Fall Time vs. Supply Voltage 330 TA = +25°C 220 198 10,000pF 132 4700pF 110 CL = 1000pF TA = +25°C 70 TIME (nsec) 10,000pF 330 60 50 66 3 t D1 4700pF 2200pF 2 80 TA = +25°C 264 TIME (ns) TIME (nsec) 440 Delay Time vs. Supply Voltage 40 2200pF t D2 0 9 11 VDD (V) 13 0 15 5 Rise and Fall Times vs. Temperature 24 13 tRISE 16 65 85 105 TEMPERATURE (°C) t D2 t D1 42 0 45 65 85 105 TEMPERATURE (°C) 1000 10,000 CAPACITIVE LOAD (pF) TELCOM SEMICONDUCTOR, INC. TIME (nsec) 500kHz 5 20kHz 6 100 2200 6 Supply Current vs. Frequency CL = 1000pF 5VDD 10VDD 15VDD 10 100 520 940 1360 1780 CAPACITIVE LOAD (pF) 100 100 15 VDD 10 100 4 12 TA = +25°C 10 VDD 15 200kHz Fall Time vs. Capacitive Load TA = +25°C 100 13 18 125 1000 5 VDD 11 VDD (V) 0 25 Rise Time vs. Capacitive Load 1000 9 CL = 1000pF VDD = 15V TA = +25°C 24 48 125 7 30 36 45 5 Supply Current vs. Capacitive Load 54 tFALL 0 25 30 15 CL = 1000pF VDD = +15V 8 TIME (nsec) 11 VDD (V) 60 TIME (nsec) TIME (nsec) 32 9 Delay Time vs. Temperature 40 CL = 1000pF VDD = +15V 7 SUPPLY CURRENT (mA) 7 10,000 1000 CAPACITIVE LOAD (pF) SUPPLY CURRENT (mA) 5 80 VDD = 15V TA = +25°C VDD = 10V 7 60 40 20 VDD = 5V 0 10 100 1000 FREQUENCY (kHz) 10,000 4-211 8 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 TYPICAL CHARACTERISTIC (Cont.) Low-State Output Resistance 50 TA = +25°C 100mA R OUT (Ω) ROUT (Ω ) 50mA 9 10 -8 TA = +25°C TA = +25°C 42 13 11 Crossover Energy Loss High-State Output Resistance 100mA 34 26 A (sec) 15 50mA 10 -9 10mA 18 7 10mA 5 10 5 7 9 11 VDD (V) 13 Quiescent Power Supply Current vs. Supply Voltage 9 11 VDD (V) 13 10 -10 15 4 6 8 10 12 VDD (V) 14 16 18 Quiescent Power Supply Current vs. Supply Voltage 20 20 SUPPLY VOLTAGE (V) BOTH INPUTS LOGIC “0” SUPPLY VOLTAGE (V) 7 5 15 15 10 5 BOTH INPUTS LOGIC “1” 15 10 5 0 0 0 50 100 150 200 300 SUPPLY CURRENT (µA) 400 1 2 3 4 5 SUPPLY CURRENT (mA) 6 Thermal Derating Curves 1600 MAX. POWER (mV) 1400 8 Pin DIP 1200 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (°C) 4-212 TELCOM SEMICONDUCTOR, INC.