1 TC4431 TC4432 1.5A HIGH-SPEED 30V MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ ■ ■ The TC4431/4432 are 30V CMOS buffer/drivers suitable for use in high-side driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept, without damage or logic upset, up to 300mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge. Under-voltage lockout circuitry forces the output to a "low" state when the input supply voltage drops below 7V. Maximum startup VDD bias voltage threshold is 10V. For operation at lower voltages, the LOCK DIS, Pin 3 can be grounded to disable the lockout and start-up circuit. The under-voltage lockout and start-up circuit gives brown out protection when driving MOSFETS. ■ ■ ■ ■ ■ High Peak Output Current ............................... 1.5A Wide Operating Range ............................. 5V to 30V High Capacitive Load Drive Capability ......................... 1000 pF in 25nsec Short Delay Time ................................ <78nsec Typ Low Supply Current — With Logic “1” Input ................................. 2.5mA — With Logic “0” Input ................................. 300µA Low Output Impedance ....................................... 7Ω Latch-Up Protected .......... Will Withstand >300mA Reverse Current ESD Protected .................................................... 4 kV 3 4 ORDERING INFORMATION Part No. Package TC4431COA TC4431CPA TC4431EJA TC4431EOA TC4431EPA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP Temperature Range 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 40°C to +85°C Part No. Package TC4432COA TC4432CPA TC4432EJA TC4432EOA TC4432EPA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP Temperature Range 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 40°C to +85°C 5 FUNCTIONAL BLOCK DIAGRAM 8 3 VDD 6 UV LOCK LOCK DIS. 2 mA Inverted TC4431 7 6 INPUT 2 250mV OUT OUT 7 Non-Inverted TC4432 TC4431/32 Inverting/Noninverting GND 4, 5 EFFECTIVE INPUT C = 10pF 8 TC4431/2-8 10/21/96 TELCOM SEMICONDUCTOR, INC. 4-257 1.5A HIGH-SPEED 30V MOSFET DRIVERS TC4431 TC4431 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ............................................................36V Input Voltage (Note 1) ........................ VDD + 0.3V to GND Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 250°C/W SOIC RθJ-C ..................................................... 75°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version ........................................... - 40°C to +85°C Package Power Dissipation (TA ≤ 70°C ) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = +25°C with 5.0 ≤ VDD ≤ 30V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max 0V ≤ VIN ≤ VDD (16V MAX) 2.4 — –1 — — — — 0.8 1 Unit Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current (Note 1) V V µA Output VOH VOL RO IPK High Output Voltage Low Output Voltage Output Resistance (VOL) Peak Output Current IREV Latch-Up Protection Withstand Reverse Current IOUT = 100mA VDD = 30V, IO = 10mA Source: VDD = 30V Sink: VDD = 30V Duty Cycle ≤ 2% t ≤ 300 µsec VDD – 1.0 — — — — 0.3 VDD – 0.8 — — 0.025 7 10 3.0 — 1.5 — — — V V Ω A A Switching Time (Note 2) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1 Figure 1 Figure 1 Figure 1 — — — — 25 33 62 78 40 50 80 90 nsec nsec nsec nsec IS Power Supply Current VIN = 3V VIN = 0V Start-up Threshold Drop-out Threshold 2.5 0.3 8.4 7.7 4 0.4 10 — mA VS VDO — — — 7 Power Supply 4-258 (Note 3) V V TELCOM SEMICONDUCTOR, INC. 1.5A HIGH-SPEED 30V MOSFET DRIVERS 1 TC4431 TC4432 ELECTRICAL CHARACTERISTICS (Cont.): Symbol Parameter Specifications measured over operating temperature range with 5.0V ≤ VDD ≤ 30V, unless otherwise specified. Test Conditions Min Typ Max Unit 0V ≤ VIN ≤ VDD (16V MAX) 2.4 — –1 — — — — 0.8 1 V V µA VDD – 1.2 — — — — — — 0.025 12 V V Ω Figure 1 Figure 1 Figure 1 Figure 1 — — — — — — — — 60 70 100 110 nsec nsec nsec nsec VIN = 3V VIN = 0V — — — 7 — — 8.4 7.7 6 0.7 10 — mA 2 Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current (Note 1) Output VOH High Output Voltage VOL Low Output Voltage RO Output Resistance Switching Time (Note 2) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time IOUT = 100mA VDD = 30V, IO = 10mA Power Supply IS Power Supply Current VS VDO Start-up Threshold Drop-out Threshold (Note 3) 3 4 V V NOTES: 1. For inputs >16V, add a 1kΩ resistor in series with the input. See graph on page 4 for input current. 2. Switching times are guaranteed by design. 3. For operation below 7V, the LOCK DIS., Pin 3 can be grounded to disable the lockout and start-up circuit. 5 PIN CONFIGURATIONS VDD 1 IN 2 LOCK DIS 3 TC4431 GND 4 8 VDD 7 OUT VDD 1 6 OUT LOCK DIS 3 5 GND GND 4 7 2 6 INVERTING IN 2 8 VDD 7 OUT TC4432 6 6 OUT 5 GND 7 2 6 NONINVERTING 7 NOTE: SOIC pinout is identical to DIP. 8 TELCOM SEMICONDUCTOR, INC. 4-259 1.5A HIGH-SPEED 30V MOSFET DRIVERS TC4431 TC4431 +5V 90% INPUT 10% 0V VDD= 30V 4.7 µF tD1 VDD 0.1 µF tD2 tF tR 90% 90% OUTPUT 1, 8 7 OUTPUT Inverting Driver CL = 1000 pF 6 +5V 3 LOCK DIS. 10% 10% 0V 2 INPUT 90% INPUT 4, 5 10% 0V VDD INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10nsec tD1 90% tD2 90% tR OUTPUT 10% 0V tF 10% Noninverting Driver Figure 1. Switching Time Test Circuit TYPICAL CHARACTERISTICS Rise/Fall Time vs. VDD CLOAD = 1000pf at 258C Supply Current vs. Capacitive Load 60 150 2 MHz 50 125 40 100 Time (nsec) ISUPPLY (mA) VDD = 12V 30 900 kHz 20 600 kHz 10 1000 CLOAD (pF) 75 50 TR 25 200 kHz 20 kHz 0 100 TF 0 3 10,000 Input Current vs. Input Voltage 6 12 15 18 21 VDD (VOLTS) 24 27 30 27 30 TD1 and TD2 Delay vs. VDD CLOAD = 1000pf at 258C 300 50 9 45 250 TD1 35 Time (nsec) Input Curent (mA) 40 30 25 20 WITHOUT 1K RES. 15 10 200 150 TD2 100 50 WITH 1K RES. 5 0 0 3 4-260 6 9 12 15 18 21 Input Voltage (VIN) 24 27 30 3 6 9 12 15 18 21 VDD (VOLTS) 24 TELCOM SEMICONDUCTOR, INC.