Product Datasheet August 15, 2000 36 - 40 GHz Power Amplifier TGA1073C-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm Primary Applications The two-stage design consists of two 400 µm input devices driving four 400 µm output devices. The TGA1073C provides 24 dBm of output power at 1dB gain compression and 26 dBm saturated output power across the 36-40 GHz with a typical small signal gain of 15 dB. The TGA1073C requires a minimum of off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. Point-to-Point Radio • Point-to-Multipoint Radio TGA1073C Typical RF Performance (Fixtured) 20 Gain and Return Loss (dB) The TriQuint TGA1073C-SCC is a two stage PA MMIC design using TriQuint’s proven 0.25 µm Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio and point-to-multipoint systems. • 15 S21 10 5 0 -5 -10 S22 -15 S11 -20 -25 33 34 35 36 37 38 39 40 41 42 43 Frequency (GHz) TGA1073C Typical RF Performance (Fixtured) Typical Performance, 36-40 GHz Unit +5V Supply +6V Supply +7V Supply dB 15 dBpp 1 Output P1dB dBm 24 25 26 Saturated Output Power dBm 26 27 28 Saturated PAE Output OTOI % dBm 23 22 34 20 IMR3 @ SCL = P1dB - 10dB dBc 34 Input Return Loss dB -10 Output Return Loss Reverse Isolation dB dB Quiescent Current mA -8 -35 225 240 260 50 30 48 P1dB 27 46 24 44 21 42 VD = +5V, +6V, +7V 18 IMR3 @ SCL=P1dB-10dB (dBc) Parameter Small Signal Gain Gain Flatness Output Power @ P1dB (dBm) 33 40 15 38 12 36 IMR3 @ VD = +6V 9 34 6 32 3 30 36 37 38 39 40 41 42 Frequency (GHz) TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 Product Datasheet TGA1073C-SCC MAXIMUM RATINGS SYMBOL VALUE PARAMETER 5/ NOTES V+ POSITIVE SUPPLY VOLTAGE 8V + POSITIVE SUPPLY CURRENT 480 mA 1/ PIN INPUT CONTINUOUS WAVE POWER 23 dBm 4/ PD POWER DISSIPATION 3.84 W TCH OPERATING CHANNEL TEMPERATURE 150 0C I TM TSTG 2/ 3/ 0 MOUNTING TEMPERATURE (30 SECONDS) 320 C -65 to 150 0C STORAGE TEMPERATURE 1/ Total current for all stages. 2/ These ratings apply to each individual FET. 3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ This value reflects an estimate. Actual value will be inserted as soon as it is determined. 5/ These ratings represent the maximum operable values for this device. DC SPECIFICATIONS (100%) (TA = 25 °C + 5 °C) NOTES SYMBOL TEST CONDITIONS 2/ LIMITS UNITS MIN MAX IDSS1 STD 40 188 mA GM1 STD 88 212 mS 1/ |VP1| STD 0.5 1.5 V 1/ |VP2| STD 0.5 1.5 V 1/ |VP3-6| STD 0.5 1.5 V 1/ |VBVGD1,2| STD 11 30 V 1/ |VBVGS1| STD 11 30 V 1/ VP, VBVGD, and VBVGS are negative. 2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate notification to the buyer). TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Product Datasheet TGA1073C-SCC RF SPECIFICATIONS (T A = 25°C + 5°C) NOTE TEST MEASUREMENT CONDITIONS 6V @ 240mA VALUE MIN TYP MAX SMALL-SIGNAL GAIN MAGNITUDE 36 – 39 GHz 12 15 dB 40 GHz 9 14 dB POWER OUTPUT AT 1 dB GAIN COMPRESSION 37 GHz 23 26 dBm 38.5 GHz 23 26 dBm 40 GHz 21 25 dBm 1/ INPUT RETURN LOSS MAGNITUDE 36 – 40 GHz -10 dB 1/ OUTPUT RETURN LOSS MAGNITUDE 36 – 40 GHz -8 dB 33 dBm 1/ OUTPUT THIRD ORDER INTERCEPT 1/ UNITS RF probe data is taken at 1 GHz steps. RELIABILITY DATA PARAMETER RθJC Thermal resistance (channel to backside of c/p) BIAS CONDITIONS VD (V) ID (mA) 6 240 PDISS (W) 1.44 RθJC (C/W) 32.43 TCH (°C) 116.7 TM (HRS) 2.1 E7 Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3 Product Datasheet TGA1073C-SCC Mechanical Characteristics 7 6 5 1 2 4 8 3 Units: millimeters (inches) Thickness: 0.1016 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.0508 (0.002) Bond Pad #1 Bond Pad #2 Bond Pads #3, 4, 5 Bond Pads #6, 7, 8 (RF Input) (RF Output) (VD) (VG) TriQuint Semiconductor Texas : (972)994 8465 0.100 x 0.130 (0.004 x .005) 0.100 x 0.130 (0.004 x .005) 0.100 x 0.100 (0.004 x .004) 0.100 x 0.100 (0.004 x .004) Fax (972)994 8504 Web: www.triquint.com 4 Product Datasheet TGA1073C-SCC 1µF Cap on Supply Line VG 0.01µF 100pF 100pF RF In 100pF RF Out 100pF 1µF Cap on Supply Line 0.01µF VD Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5 Product Datasheet TGA1073C-SCC Reflow process assembly notes: •= •= •= •= •= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: •= •= •= •= •= •= •= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: •= •= •= •= •= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200ΓC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 6