Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications • Ka Band Sat-Com Chip Dimensions 2.641 mm x 1.480 mm TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA 18 16 14 12 S21 (dB) 10 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 VD = 7V 31 P1dB (dBm) 30.5 30 VD = 6V 29.5 29 Note: 1 dB of compression not reached on some parts at 27, 27.5 GHz 28.5 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information Feb 4, 2000 TGA1135B Measured small signal data 6V, 540mA 18 16 14 12 S21 S21 (dB) 10 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) , -5 -7 -9 S11 S11 (dB) -11 -13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) -5 -7 -9 S22 S22 (dB) -11 -13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information Feb 4, 2000 TGA1135B TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 VD = 7V 31 P1dB (dBm) 30.5 30 VD = 6V 29.5 29 Note: 1 dB of compression not reached on some parts at 27, 27.5 GHz 28.5 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) P1dB Measured Data TGA1135B wafer 993150303 nominal performance TOI performance @ Pin SCL=7dBm: Vd=6V, Id=540mA, separation = 10MHz 43 42 41 TOI (dBm) 40 39 38 37 36 35 34 33 17 18 19 20 21 22 23 24 25 26 27 28 Frequency (GHz) Output TOI Measured Data Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information Feb 4, 2000 TGA1135B VG1 VG2 GND DQ VD DET OUT Q1a Q2a 600µ µm 1200µ µm PWR DET Note: drains not connected on lot 9931503 RF IN Q2b Q1b RF OUT 1200µ µm 600µ µm Reference diode 1 Reference diode 2 REF3 GND VG1 VG2 GND DQ Note: no DC current allowed into the “DQ” pad VD REF1 REF2 Note: If drain bias is from one side only, maximum Id is 440mA DC Schematic Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information Feb 4, 2000 DET OUT 2.543 2.641 (180x100µm) 1.253: VD 0.875: DQ 0.095 0.612: VG2 TGA1135B 1.480 0.833 PWR DET 0.686 RF IN (175x100µm) 0.373 RF OUT 0.098 REF 2: 2.543 REF 3: 2.360 (180x100µm) VD: 1.253 DQ: 0.875 VG2: 0.612 REF 1: 0.220 0.000 0.000 Dimensions in mm RF I/O Pad: 200x100 mm DC Pads: 105x105 mm Die Area: 3.909 mm2 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information Feb 4, 2000 TGA1135B TGA1135B built-in power detector Vdet Vbias 100pF 100pF RF IN RF OUT TGA1135B with external test coupler (amplifier bias connections not shown) On-chip diode functions as envelope detector External coupler and DC bias required 10 Detector voltage (V) 10KΩ EG1135B measured detector voltage offset vs output power with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated, Ω load 10KΩ Video out (Vdet) 1 EG1135B External DC bias C=2pF 50Ω 0.1 RF OUT 0.01 8 10 12 14 16 18 20 22 24 26 28 30 32 External coupler (-20dB) RF OUT Pout (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information Feb 4, 2000 TGA1135B Vg (optional) 0.01µ µF 0.01µ µF Vd DQ 100pF 100pF Input TFN Output TFN 100pF 100pF DQ 0.01µ µF Vg 0.01µ µF Vd Notes: 1. 1µ µF capacitor on gate, drain lines not shown but required 2. 0.01µ µF capacitor may be connected to “DQ” port as shown, or may be included on drain line 3. Vg connection is recommended on both sides for devices operating at or above P1dB Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information Feb 4, 2000 Assembly Process Notes Reflow process assembly notes: •= •= •= •= •= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: •= •= •= •= •= •= •= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: •= •= •= •= •= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200ΓC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8