T R I Q U I N T S E M I C TGA8035-SCC O N D U C Gain Block Amplifier ● ● ● ● ● ● 6 to 18- GHz Frequency Range T O R , I N C . 8035 13- dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5- dBm Typical Output Power at 1 -dB Gain Compression 5 - dB Typical Noise Figure 2,4892 x 2,0574 x 0,1143 mm (0.098 x 0.081 x 0.0045 in.) PHOTO ENLARGEMENT DESCRIPTION The TriQuint TGA8035 - SCC is a two - stage GaAs monolithic amplifier designed for use as a broadband general-purpose gain block. T wo 300 - µm gate - width FETs provide a 13- dB typical gain and a 5- dB noise figure from 6 to 18- GHz. Typical output power at 1- dB gain compression is 12.5- dBm. Shunt feedback is used around each active device to improve gain flatness and standing - wave ratio (SWR). Ground is provided to the circuitry through vias to the backside metallization. The TGA8035-SCC amplifier is suitable for a variety of broadband electronic warfare (EW) applications. The combination of gain, power, and noise figure makes this device an exceptional post amplifier following a low-noise amplifier. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as thermocompression and thermosonic wire- bonding processes. The TGA8035 - SCC is supplied in chip form and is readily assembled using automated equipment. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8035-SCC 20 TYPICAL SMALL-SIGNAL POWER GAIN VD1 VD2 VD1 , V, D2 = 5= V5 V 50%I DSS1 I DSS1 I D1= =50% I D1 I D2= =50% 50%I DSS2 I DSS2 I D2 25°C T ATA= =25° C 18 16 Gain (dB) 14 12 10 8 6 4 2 0 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) 8 TYPICAL NOISE FIGURE D1,,VVD2 D2== VVD1 5 5V V 50% I DSS1 IID1 D1==50% DSS1 50% I DSS2 IID2 DSS2 D2==50% TTAA == 25° C 25°C 7 Noise Figure (dB) 6 5 4 3 2 1 0 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) 20 TYPICAL OUTPUT POWER VVD1 VV D1,,VVD2 D2==5 5 = 50% I DSS1 IID1 D1 = 50% DSS1 IID2 ==50% DSS2 50% II DSS2 D2 TTA == 25° C 25°C A 18 P1dB Output Power (dBm) 16 14 12 10 8 6 4 2 0 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 2 TGA8035-SCC 0 TYPICAL RETURN LOSS V ,V =5V VD1D1, V D2D2= 5 V 50% II DSS1 I ID1D1==50% DSS 50% IIDSS DSS2 I ID1D2==50% 25°C TTAA==25° C Return Loss (dB) 2 4 6 8 10 12 Input Input Output Output 14 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) ABSOLUTE MAXIMUM RATINGS Drain supply voltage, VD1, VD2 ................................................................................................................ 8V Drain supply voltage range with r espect to negative supply voltage, VD1 - VG1, VD2 - VG2 .................... 0 V to 8 V Negative supply voltage range, VG1, VG2 ...................................................................................... 0 V to - 5 V Positive supply current, ID1 .................................................................................................................. I DSS1 Positive supply current, ID2 .................................................................................................................. I Power dissipation at (or below) 25 C base-plate temperature, PD* ...................................................... Input continuous wave power, PIN .................................................................................................... DSS2 1.4 W 20 dBm Operating channel temperature, TCH ** .............................................................................................. 150 C Mounting temperature (30 sec), TM .................................................................................................... 320 C Storage temperature range, TSTG ............................................................................................ - 65 to 150 C Ratings over operating channel temperature range, T CH (unless otherwise noted) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25 C base - plate temperature, derate linearly at the rate of 3 mW/ C. * Operating channel temperatur e (TCH) directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the lowest possible level. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 3 TGA8035-SCC TYPICAL S-PARAMETERS Frequency (GHz) S 11 MAG S 21 S 12 S 22 ANG(° ) MAG ANG(° ) MAG ANG(° ) MAG GAIN ANG(° ) (dB) 5.0 5.5 0.54 0.35 75 71 2.34 3.49 55 9 0.013 0.018 109 77 0.59 0.47 73 61 7.4 10.9 6.0 6.5 0.31 0.31 75 62 4.33 4.89 -34 -73 0.021 0.022 46 15 0.39 0.33 49 33 12.7 13.8 7.0 7.5 0.28 0.24 34 -7 5.16 5.28 -108 -141 0.022 0.021 -15 -44 0.28 0.25 14 -7 14.2 14.5 8.0 8.5 9.0 0.25 0.30 0.37 -53 -91 -117 5.27 5.05 4.92 -172 161 136 0.021 0.020 0.019 -75 -102 -124 0.24 0.26 0.30 -31 -52 -71 14.4 14.1 13.8 9.5 10.0 0.42 0.46 -138 -154 4.82 4.71 112 90 0.021 0.021 -144 -164 0.34 0.38 -88 -102 13.7 13.5 10.5 11.0 11.5 12.0 12.5 13.0 13.5 0.48 0.48 0.46 0.43 0.38 0.33 0.27 -168 178 166 153 140 129 123 4.68 4.73 4.91 5.13 5.28 5.42 5.52 69 48 27 5 -18 -41 -64 0.020 0.020 0.021 0.021 0.021 0.021 0.021 177 174 161 151 141 132 120 0.42 0.43 0.45 0.46 0.45 0.43 0.41 -115 -125 -134 -144 -154 -164 -173 13.4 13.5 13.8 14.2 14.5 14.7 14.8 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 0.25 0.24 0.24 0.22 0.21 0.24 0.24 0.23 0.28 0.35 0.41 0.53 0.68 118 112 100 89 81 67 46 27 -4 -48 -92 -122 5.68 5.61 5.59 5.40 5.10 5.05 5.12 5.06 5.27 5.49 4.91 -89 -113 -138 -163 174 153 129 103 78 46 9 0.020 0.017 0.013 0.014 0.015 0.012 0.007 0.010 0.005 0.007 0.012 109 97 96 94 80 47 44 28 -38 -17 -85 0.39 0.38 0.35 0.32 0.31 0.33 0.32 0.34 0.35 0.33 0.29 178 167 154 143 136 123 114 108 93 83 73 15.1 15.0 14.9 14.6 14.1 14.1 14.2 14.1 14.4 14.8 13.8 4.01 3.37 -23 -55 0.012 -152 0.19 75 0.008 156 0.18 100 12.1 10.5 -149 I D1 = 50% I DSS1, I D2 = 50% I DSS2, VD1, VD2 = 5 V, TA = 25°C Reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly Diagram.” TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 4 TGA8035-SCC RF CHARACTERISTICS PARAMETER GP SWR(in) SWR(out) P 1dB NF TEST CONDITIONS Small–signal power gain Input standing–wave ratio Output standing–wave ratio Output power at 1–dB gain compression Noise figure f f f f f TYP = 6 to 18 G Hz = 6 to 18 GHz = 6 to 18 G Hz = 6 to 18 G Hz = 6 to 18 GHz UNIT 13 dB 2.2:1 — 2.2:1 — 12.5 dBm 5 dB VD1, VD2 = 5 V, VG1 = - 1 V, VG2 = - 1 V, TA = 25°C DC CHARACTERISTICS PARAMETER TEST CONDITIONS I DSS1 Total zero–gate–voltage drain current at saturation for FET1 * I DSS2 Total zero–gate–voltage drain current at saturation for FET2 ** V DS = 0.5 V to 3.5 V, V GS = 0 V DS = 0.5 V to 3.5 V, V GS = 0 MIN MAX UNIT 36 108 mA 36 108 mA TA = 25°C * VDS1 for I DSS1 is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe. ** VDS2 for I DSS2 is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe. THERMAL INFORMATION PARAMETER R JC TEST CONDITIONS Thermal resistance, channel–to–backside ID=72 mA, V D=5V TEST CONDITIONS 25°C Base, 80°C Channel** 85°C Base, 151°C Channel** 100°C Base, 169°C Channel** FET MMIC* UNIT 152.5 184.7 192.8 76.3 92.4 96.4 °C/W * MMIC thermal resistance is the peak FET temperature rise divided by the total MMIC dissipated power (.72 W). ** Hottest Gate Channel (Center of either FET). EQUIVALENT SCHEMATIC R F Output FET 2 300 m FET 1 300 m RF Input V D1 V D2 VG2 V G1 TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 5 TGA8035-SCC TYPICAL BIAS NETWORK 1 RF Input 2 TGA8035 RF Output 3 4 5 6 VD1,VD2 VG1,VG2 CBypass RBypass CBypass RECOMMENDED ASSEMBLY DIAGRAM RF Input RF Output 25 0.01 F 0.01 F VD1,VD2 VG1,VG2 RF connections: bond using two 1-mil diameter, 20 to 25 - mil- length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential to stability. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 6 TGA8035-SCC 0,1803 (0.0071) MECHANICAL DRAWING 2,3114 (0.0910) 2,0574 (0.081) 1,4656 (0.0577) 1 2 0,2108 (0.0083) 6 5 4 3 0,4039 (0.0159) 0,9246 (0.0364) 1,8034 (0.0710) 2,1590 (0.0850) 1,4681 (0.0578) 0,2108 (0.0083) 0 0 2,4892 (0.0980) Units: millimeters (inches) Thickness: 0,1143 (0.045) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad. Chip size tolerance: ± 0,0508 (0.002) Bond Bond Bond Bond Bond Bond TriQuint Semiconductor, Inc. • Texas Facilities pad pad pad pad pad pad #1 #2 #3 #4 #5 #6 (RF Input): (RF Output): (VD2): (VG2): (VD1): (VG1): • (972) 995-8465 0,0940 x 0,2362 (0.0037 x 0.0093) 0,0991 x 0,2413 (0.0039 x 0.0095) 0,2286 x 0,1143 (0.0090 x 0.0045) 0,2286 x 0,1143 (0.0090 x 0.0045) 0,2286 x 0,1143 (0.0090 x 0.0045) 0,2286 x 0,1143 (0.0090 x 0.0045) • www.triquint.com 7