R I Q U I N T S E M I TGF4260-EPU C O N D U C 9.6mm Discrete HFET ● ● ● ● ● ● T O R , I N C . 4260 9600 m x 0.5 m Nominal Pout of 37 - dBm at 6.0 GHz Nominal Gain of 9.5 - dB at 6.0 GHz Nominal PAE of 52 % at 6.0 GHz Suitable for high reliability applications 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.) PRELIMINARY RF PERFORMANCE 40 56 Pout (dBm) Gain (dB) 35 49 30 42 25 35 20 28 15 21 10 14 5 7 0 0 15 TriQuint Semiconductor, Inc. • 17 Texas Facilities 19 21 23 Input Power - dBm • (972) 995-8465 25 • www.triquint.com 27 29 Power Added Efficency - % PAE (%) Gain - dB Output Power - dBm T