WIRELESS COMMUNICATIONS DIVISION C2 Control Logic TQ3132 L1 C2 VDD GND GND RF IN DATA SHEET Low Current, 3V Cellular Band CDMA/AMPS LNA IC RF 50 ohm OUT RF Out GND C3 Control Logic Features Small size: SOT23-8 Single 3V operation Product Description Low-current operation The TQ3132 is a low current, 3V, RF LNA IC designed specifically for Cellular band CDMA/AMPS applications. It’s RF performance meets the requirements of products designed to the IS-95 and AMPS standards. The TQ3132 is designed to be used with the TQ5131 or TQ5132 (CDMA/AMPS mixer) which provides a complete CDMA receiver for 800MHz dual-mode phones. Gain Select The LNA incorporates on-chip switches which determine CDMA, AMPS, and bypass mode select. When used with the TQ5131 or TQ5132 (CDMA RFA/mixer), four gain states are available. The RF output port is internally matched to 50 Ω, greatly simplifying the design and keeping the number of external components to a minimum. The TQ3132 achieves good RF performance with low current consumption, supporting long standby times in portable applications. Coupled with the very small SOT23-8 package, the part is ideally suited for Cellular band mobile phones. 50Ω Output Electrical Specifications1 Min Frequency 832 Typ AMPS Mobile Phones 894 MHz Dual Mode CDMA Cellular applications Noise Figure 1.4 dB 3rd 8.0 dBm 7.5 mA DC supply Current Applications Units dB Order Intercept Few external components Max 13.0 Input High IP3 performance IS-95 CDMA Mobile Phones Parameter Gain Mode Select 832-870MHz CDMA applications Note 1: Test Conditions: Vdd=2.8V, Tc=25C, RF frequency=881MHz, CDMA High Gain state. For additional information and latest specifications, see our website: www.triquint.com 1 TQ3132 Data Sheet Electrical Characteristics Parameter Conditions RF Frequency Min. Typ/Nom Max. Units 832 881 894 MHz 10.5 13.0 CDMA Mode-High Gain Gain Noise Figure 1.4 dB 1.7 Input IP3 6.0 LNA IN Return Loss (with external matching) 10 dB LNA OUT Return Loss 10 dB Supply Current 8.0 dB 7.5 dBm 9.5 mA Bypass Mode Gain -3.0 Noise Figure -2.0 2.0 Input IP3 20.0 dB 3.0 25.0 dB dBm LNA IN Return Loss (with external matching) 10 dB LNA OUT Return Loss 10 dB Supply Current 1.0 2.5 mA AMPS Mode Gain 8.5 Noise Figure 1.6 dB 2.4 2.0 LNA IN Return Loss (with external matching) 10 dB LNA OUT Return Loss 10 dB Supply Voltage 2.7 Note 1: Test Conditions: Vdd=2.8V, RF=881MHz, TC = 25° C, unless otherwise specified. Note 2: Min/Max limits are at +25°C case temperature, unless otherwise specified. Absolute Maximum Ratings Parameter Value Units DC Power Supply 5.0 V Power Dissipation 500 mW Operating Temperature -30 to 85 C Storage Temperature -60 to 150 C Signal level on inputs/outputs +20 dBm Voltage to any non supply pin +0.3 V For additional information and latest specifications, see our website: www.triquint.com 4.0 dB Input IP3 Supply Current 2 11.0 dBm 4.5 5.5 mA 2.8 3.3 V TQ3132 Data Sheet Typical Performance Test Conditions, unless Otherwise Specified: Vdd=2.8V, Tc=+25C, RF=881MHz CDMA High Gain Mode Idd v Vdd v Temp 10.00 15.0 14.5 14.0 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 9.00 8.00 Idd (mA) Gain (dB) CDMA High Gain Mode Gain v Freq v Temp -30C +25C +85C 7.00 6.00 -30C +25C +85C 5.00 4.00 860 870 880 890 900 2.5 2.7 CDMA High Gain Mode IIP3 v Freq v Temp 9.0 Gain (dB) IIP3 (dBm) 9.5 8.5 8.0 -30C +25C +85C 7.5 7.0 890 14.0 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 9.5 9.0 3.5 -30C +25C +85C 860 900 870 880 Frequency (MHz) Frequency (MHz) CDMA High Gain Mode Noise Figure v Freq v Temp AMPS Mode IIP3 v Freq v Temp 2.00 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 890 900 10.0 -30C +25C +85C 9.0 8.0 IIP3 (dBm) Noise Figure (dB) 880 3.3 AMPS Mode Gain v Freq v Temp 10.0 870 3.1 Vdd (V) Frequency (MHz) 860 2.9 -30C +25C +85C 7.0 6.0 5.0 4.0 3.0 860 870 880 Frequency (MHz) 890 900 860 870 880 890 900 Frequency (MHz) For additional information and latest specifications, see our website: www.triquint.com 3 TQ3132 Data Sheet AMPS Mode Noise Figure v Freq v Temp BYPASS Mode IIP3 v Freq v Temp 38.0 37.0 2.00 -30C +25C +85C 36.0 IIP3 (dBm) Noise Figure (dB) 2.50 1.50 1.00 -30C +25C +85C 0.50 35.0 34.0 33.0 32.0 31.0 30.0 0.00 860 870 880 890 860 900 870 900 BYPASS Mode Noise Figure v Freq v Temp 2.50 5.30 5.20 5.10 5.00 4.90 4.80 4.70 4.60 4.50 4.40 4.30 Noise Figure (dB) Idd (mA) AMPS Mode Idd v Vdd v Temp -30C +25C +85C 2.00 1.50 1.00 -30C +25C +85C 0.50 0.00 2.5 2.7 2.9 3.1 3.3 860 3.5 890 BYPASS Mode Gain v Freq v Temp BYPASS Mode Idd v Vdd v Temp Idd (mA) -1.0 -1.5 -2.0 -30C +25C +85C -2.5 -3.0 870 880 Frequency (MHz) -0.5 860 870 Vdd (V) 0.0 Gain (dB) 890 Frequency (MHz) Frequency (MHz) 880 890 900 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 900 -30C +25C +85C 2.5 Frequency (MHz) 4 880 For additional information and latest specifications, see our website: www.triquint.com 2.7 2.9 3.1 Vdd (V) 3.3 3.5 TQ3132 Data Sheet Application/Test Circuit Vdd R1 Control Logic C2 Vdd GND GND C2 (paddle) LNA input L1 RF in RF out LNA output LNA GND C3 Control Logic C1 Lbrd Bill of Material for TQ3132 LNA Application/Test Circuit Component Reference Designator Part Number Value Size Manufacturer Receiver IC U1 TQ3132 SOT23-8 TriQuint Semiconductor Capacitor C1 3pF 0402 Capacitor C2 15pF 0402 Resistor R1 3.3Ω 0402 Inductor L1 15nH 0402 Inductor Lbrd See application note For additional information and latest specifications, see our website: www.triquint.com 5 TQ3132 Data Sheet Vdd_LNA TQ3132 Product Description C2 The TQ3132 is a miniature low noise amplifier in a small SOT23-8 package (2.9X2.8X1.14 mm) with operation at 2.8v. The LNA specs are designed to be compatible with IS-98 Interim Standard for Dual-Mode CDMA cellular systems. The LNA features excellent linearity with small current consumption in all modes. TQ3132 is configured in a cascode topology with switching circuitry for the various CDMA output levels. A bias control circuit sets the quiescent current for each mode and ensures peak performance over process and temperature. C2 LNA Gain Select 1 Bias Control Switch Control 8 VDD LNA_GS C2 1 TQ3132 8 2 7 3 6 4 5 LNA_IN C1 L1 LNA_OUT C3 LNA_MD Shorted Board Inductor Figure 2. TQ3132 Applications Circuit GND 2 LNA IN 3 LNA GND 4 7 GND S6 6 S1 S2 S3 S4 S5 5 LNA OUT C3 LNA Mode Select Figure 1. TQ3132 Functional Block Diagram LNA Input Matching Network Only three external components are needed to tune the LNA (see Figure 2). The chip uses an external capacitor and inductor for the input match to pin 3. The output is internally matched to 50 ohms at pin 6. In the TQ3132 the matching network is in the signal path for all three modes: High Gain, AMPS, and Bypass. Therefore, some experimentation is required to find the matching network that provides a compromise between noise figure and gain for all 3 modes. One could take the values used on TriQuint’s evaluation board as a starting point (see Figure 2). The input match will affect the output match to some degree as well, so S22 should be monitored. 6 Selecting the LNA Vdd Bypass Capacitor A Vdd bypass capacitor is recommended close to pin 8. The Vdd bypass capacitor has the largest effect on the LNA output match. Because the input match affects the output match to some degree as well, the process of picking the bypass capacitor value involves some iteration. First, an input match is selected to give adequate gain and noise figure. Then the bypass capacitor is varied to give the best output match. TriQuint’s evaluation board achieves a 2:1 VSWR with the selected tuning components which allows direct connection to the input of a SAW filter. Logic Control Functions The control lines can be toggled between high and low levels using CMOS logic circuitry. A logic level high (C3) is applied to pin 5 to change bias state from CDMA to Amps modes. Similarly, a logic level high (C2) at pin 1 selects the gain step for the amplifier. In the high gain mode, switches S1, S2, and S5 are closed, with switches S3 and S4 open. In the bypass mode, switches S1, S2, and S5 are open, with switches S3 and S4 closed (see figure 1). For additional information and latest specifications, see our website: www.triquint.com TQ3132 Data Sheet Table 1. TQ3132 Control lines C2, C3 TQ3132 LNA Mode C2 C3 CDMA 0 0 High Gain (HG) 1 0 Bypassed 1 1 AMPS 0 1 found that setting the spectrum analyzer attenuator to 20dB allows for accurate measurement in that mode, and in all the other modes. TQ3132 Noise and S-Parameters Data The following noise and S-parameter data was obtained using TriQuint’s evaluation board. This information is intended to be used as a guide to synthesize the LNA tuning network and find a compromise between noise figure and gain for all modes. Table 2. Gamma Opt analysis for TQ3132 High Gain Mode Gain Control via Pin 4 Inductance The source connection of the LNA cascode is brought out separately through pin 4. This allows external degeneration of the cascode by adding a small amount of PC board trace inductance to pin 4. Thus some increase in IIP3 can be made while reducing LNA gain. The total amount of inductance present at the source of the cascode is equal to the bond wire plus package plus external inductances. One should generally use an external inductance such that gain in the High Gain mode = 13.5dB. On the evaluation board the total PCB trace inductance at pin 4 is approximately 2.57nH. In order to achieve the desire gain, this board inductor should be shorted half way of its total length which is equivalent to about 1.55nH. Board Layout Recommendations Freq (MHz) Γ Opt < Angle Fmin (dB) R noise 700 0.53 32.8 1.1 24.15 880 0.52 41.5 1.0 19.03 1000 0.49 42.6 1.1 17.98 Table 3. Gamma Opt analysis for TQ3132 AMPS Mode Freq (MHz) Γ Opt < Angle Fmin (dB) R noise 700 0.62 33.5 1.3 33.5 880 0.56 40.2 1.2 26.4 1000 0.53 41.9 1.3 25.1 All ground pins should be kept close to the IC and have its own via to the ground plane to minimize inductance. Most PC boards for portable applications have thin dielectric layers and very narrow line width which increase the board parasitic capacitance and inductance. To minimize these effects when implementing a matching network, it is recommended to relieve the ground underneath pads carrying RF signals whenever possible. RF input power levels for accurate test results Because the CDMA devices have a number of gain states, it important to make sure that IP3 measurements are not taken in a state of compression. Additionally, using too low of a power puts the IMD products too close to the noise floor for accurate results. Additionally, the LNA in the bypass mode have OIP3 of around 30dBm, which is higher than the IIP3 of common spectrum analyzers in their preset configuration. We have For additional information and latest specifications, see our website: www.triquint.com 7 TQ3132 Data Sheet TQ3132 HG Noise Parameters 1.0 0.5 2.0 A 0.53 @ 32.8 z = 1.84 + j 1.45 y = 0.33 - j 0.26 Freq=700MHz B C 0.5 1.0 A 2.0 B 0.52 @ 41.5 z = 1.49 + j 1.4 y = 0.36 - j 0.34 Freq=880MHz C -2.0 -0.5 -1.0 0.49 @ 42.6 z = 1.46 + j 1.29 y = 0.38 - j 0.34 Freq=1000MHz Figure 3. TQ3132 CDMA High Gain Noise Parameters TQ3132 AMPS Noise Parameters 1.0 0.5 2.0 A B C 0.5 1.0 A 2.0 0.62 @ 33.5 z = 1.76 + j 1.95 y = 0.25 - j 0.28 Freq=700MHz B 0.56 @ 40.2 z = 1.49 + j 1.6 y = 0.31 - j 0.33 Freq=880MHz C -2.0 -0.5 -1.0 0.53 @ 41.9 z = 1.46 + j 1.44 y = 0.35 - j 0.34 Freq=1000MHz Figure 4. TQ3132 CDMA AMPS Noise Parameters 8 For additional information and latest specifications, see our website: www.triquint.com TQ3132 Data Sheet Package Pinout C2 Control Logic L1 C2 VDD GND GND RF IN GND RF 50 ohm OUT RF Out C3 Control Logic Pin Descriptions Pin Name Pin # Description and Usage C2 1 Control logic 2 GND 2 Ground, paddle RF IN 3 RF input, off-chip matching required LNA GND 4 Ground, LNA Source ground C3 5 Control logic 3 RF OUT 6 RF output, no matching required LNA GND 7 Ground Vdd 8 LNA Vdd, typical 2.8V, C2 capacitor required For additional information and latest specifications, see our website: www.triquint.com 9 TQ3132 Data Sheet Package Type: SOT23-8 Plastic Package Note 1 PIN 1 E E1 b FUSED LEAD Note 2 A c e DESIGNATION A A1 b c D e E E1 L Theta L A1 DESCRIPTION OVERALL HEIGHT STANDOFF LEAD WIDTH LEAD THICKNESS PACKAGE LENGTH LEAD PITCH LEAD TIP SPAN PACKAGE WIDTH FOOT LENGTH FOOT ANGLE DIE METRIC 1.20 +/-.25 mm .100 +/-.05 mm .365 mm TYP .127 mm TYP 2.90 +/-.10 mm .65 mm TYP 2.80 +/-.20 mm 1.60 +/-.10 mm .45 +/-.10 mm 1.5 +/-1.5 DEG θ ENGLISH 0.05 +/-.250 in .004 +/-.002 in .014 in .005 in .114 +/-.004 in .026 in .110 +/-.008 in .063 +/-.004 in .018 +/-.004 in 1.5 +/-1.5 DEG NOTE 3 3 3 3 1,3 3 3 2,3 3 Notes 1. The package length dimension includes allowance for mold mismatch and flashing. 2. The package width dimension includes allowance for mold mismatch and flashing. 3. Primary dimensions are in metric millimeters. The English equivalents are calculated and subject to rounding error. Additional Information For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: (503) 615-9000 Email: [email protected] Fax: (503) 615-8900 For technical questions and additional information on specific applications: Email: [email protected] The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright © 2000 TriQuint Semiconductor, Inc. All rights reserved. Revision A, April, 2000 10 For additional information and latest specifications, see our website: www.triquint.com