Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5551 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range 2. BASE 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 180 V Collector-emitter voltage V(BR)CEO Ic= 100 µA, IB=0 160 V V(BR)EBO IE= 100 µA, IC=0 6 V Collector cut-off current ICBO VCB= 180 V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 4 V, IC=0 0.1 µA hFE(1) VCE= 5 V, IC= 1 mA 80 hFE(2) VCE= 5 V, IC = 10 mA 80 hFE(3) VCE= 5 V, IC= 50 mA 50 Collector-emitter saturation voltage VCEsat IC= 50 mA, IB= 5 mA 0.5 V Base-emitter saturation voltage VBEsat IC= 50 mA, IB= 5 mA 1 V fT VCE= 5 V,IC= 10 mA, f =30MHz breakdown Emitter-base breakdown voltage DC current gain Transition frequency TYP MAX UNIT 250 80 MHz CLASSIFICATION OF hFE(2) Rank A B C Range 80-160 120-180 150-250