Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO unless otherwise specified) Test conditions Ic=-1mA, IE=0 Ic=-10mA, IB=0 2SB649 2SB649A IE=-1mA, IC=0 MIN TYP MAX UNIT -180 V -120 -160 V -5 V Collector cut-off current ICBO VCB=-160V, IE=0 -10 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -10 µA hFE(1) VCE=-5V, IC=-150mA 2SB649A DC current gain hFE(2) VCE(sat) Collector-emitter saturation voltage VCE=-5V, IC=-500mA VBE VCE=-5V, IC=-150mA Transition frequency fT VCE=-5V, IC=-150mA Cob 60 60 320 200 30 IC=-500mA, IB=-50mA Base-emitter voltage Collector output capacitance 2SB649 VCB=-10V, IE=0, f=1MHz -1 V -1.5 V 140 MHz 27 pF CLASSIFICATION OF hFE(1) Rank Range Marking B C D 60-120 100-200 160-320