Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DA752 TO-251 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1. BASE 1.2 W (Tamb=25℃) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1m A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA DC current gain hFE(1) VCE=2V, IC=500mA VCE(sat)1 IC=2A, IB=0.2A 0.8 V VCE(sat)2 IC=1.5A, IB=30mA 2 V fT VCE=5V, IC=500mA 120 MHz Cob VCB=10V, IE=0, f=1MHz 13 pF 100 400 Collector-emitter saturation voltage Transition frequency Collector output capacitance CLASSIFICATION OF hFE(1) Rank Range Marking O Y G 100-200 160-320 200-400