FUJI 2SK2892

2SK2892-01R FUJI POWER MOSFET
[200509]
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
Outline Drawings
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
TO-3PF
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
V DS
ID
ID[puls]
VGS
EAV
PD
Tch
Tstg
Rating
30
±90
±360
±16
1728.5
100
+150
-55 to +150
Equivalent circuit schematic
Unit
Remarks
V
A
A
V
*1
mJ
W
°C
°C
*1 L=0.285mH, Vcc=12V
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Symbol
V(BR)DSS
VGS(th)
IDSS
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=30V
VGS=0V
Gate-source leakage current
Drain-source on-state resistance
IGSS
RDS(on)
VGS=±16V VDS=0V
ID=50A
VGS=10V
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
V SD
t rr
Qrr
ID=50A
VDS=25V
VDS =25V
VGS=0V
f=1MHz
VCC=15V RG=10 Ω
ID=100A
VGS=10V
35
L=100µH
90
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Tch=25°C
30
1.0
Tch=25°C
Tch=125°C
VGS=4V
VGS=10V
IF=50A VGS=0V Tch=25°C
IF=50A
-di/dt=100A/µs Tch=25°C
Typ.
Max.
1.5
10
0.2
10
7.0
4.4
70
3900
2000
850
17
70
250
180
2.0
500
1.0
100
9.5
5.5
1.0
65
0.12
5850
3000
1280
30
110
380
270
1.5
Units
V
V
µA
mA
nA
mΩ
mΩ
S
pF
ns
A
V
ns
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Min.
Typ.
Max.
Units
1.25
30.0
°C/W
°C/W
1
FUJI POWER MOSFET
2SK2892-01R
Characteristics
2
FUJI POWER MOSFET
2SK2892-01R
3
FUJI POWER MOSFET
2SK2892-01R
www.fujielectric.co.jp/fdt/scd
4