TR16 SERIES SILICON TRIACS l High Current Triacs l 16 A RMS l Glass Passivated Wafer l 400 V to 800 V Off-State Voltage l 125 A Peak Current l Max IGT of 50 mA (Quadrants 1 - 3) TO-220 PACKAGE (TOP VIEW) MT1 1 MT2 2 G 3 Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TR16-400-125 TR16-600-125 Repetitive peak off-state voltage (see Note 1) TR16-700-125 UNIT 400 600 VDRM V 700 TR16-800-125 800 IT(RMS) 16 Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 125 A Peak gate current IGM ±1 A Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C TL 230 °C Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) Lead temperature 1.6 mm from case for 10 seconds A NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IGT VGT VT IH Repetitive peak off-state current TEST CONDITIONS VD = rated VDRM IG = 0 MIN TYP TC = 110°C MAX UNIT ±2 mA Vsupply = +12 V† RL = 10 W tp(g) > 20 m s 12 50 Gate trigger Vsupply = +12 V† RL = 10 W tp(g) > 20 m s -19 -50 current Vsupply = -12 V† RL = 10 W tp(g) > 20 m s -16 -50 Vsupply = -12 V† RL = 10 W tp(g) > 20 m s 34 Vsupply = +12 V† RL = 10 W tp(g) > 20 m s 0.8 2 Gate trigger Vsupply = +12 V† RL = 10 W tp(g) > 20 m s -0.8 -2 voltage Vsupply = -12 V† RL = 10 W tp(g) > 20 m s -0.8 -2 Vsupply = -12 V† RL = 10 W tp(g) > 20 m s 0.9 2 ITM = ±22.5 A IG = 50mA (see Note 4) ±1.4 ±1.7 Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 22 40 Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -12 -40 On-state voltage Holding current mA V V mA † All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. TR16 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETE R IL Latching current off-state voltage dv/dt(c) di/dt TYP VD = Rated VD MAX UNIT 80 (see Note 5) Vsupply = -12 V† Critical rate of rise of dv/dt MIN TEST CONDITIONS Vsupply = +12 V† mA -80 IG = 0 TC = 110°C Critical rise of VD = Rated VD TC = 80°C commutation voltage di/dt = 0.5 IT(RMS)/ms IT = 1.4 IT(RMS) Critical rate of rise of VD = Rated VD on -state current diG/dt = 50 mA/m s IGT = 50 mA ±1.2 TC = 110°C ±400 V/µs ±9 V/µs ±100 A/µs † All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 W , tp(g) = 20 m s, tr = £ 15 ns, f = 1 kHz. thermal characteristics MAX UNIT Rq JC Junction to case thermal resistance PARAMETER MIN TYP 1.9 °C/W Rq JA Junction to free air thermal resistance 62.5 °C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs GATE TRIGGER VOLTAGE vs CASE TEMPERATURE CASE TEMPERATURE 10 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA 1000 100 10 1 0·1 -60 Vsupply IGTM + + + + -40 -20 VAA = ± 12 V 1 Vsupply IGTM + + + + t p(g) = 20 µs 0 20 40 60 80 100 VAA = ± 12 V } RL = 10 W 120 0·1 -60 -40 -20 RL = 10 W t p(g) = 20 µs 0 20 40 60 TC - Case Temperature - °C TC - Case Temperature - °C Figure 1. Figure 2. 80 100 120 TR16 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE CASE TEMPERATURE 1000 IL - Latching Current - mA IH - Holding Current - mA 100 10 1 Vsupply Initiating I -40 10 Vsupply IGTM VAA = ± 12 V IG = 0 + 0·1 -60 100 -20 0 20 40 TM 60 TC - Case Temperature - °C Figure 3. + + - = 100 mA 80 100 120 1 -60 -40 + + VAA = ± 12 V -20 0 20 40 60 TC - Case Temperature - °C Figure 4. 80 100 120