CHA2192 24-26.5GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Gain & NF ( dB ) The circuit is manufactured with a HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ 1.8 dB noise figure ■ 15 dB ± 1dB gain ■ 10 dBm output power ■ Very good broadband input matching ■ DC power consumption, 40mA @ 3.5V ■ Chip size : 1.67 x 0.97 x 0.10 mm 20 18 16 14 12 10 8 6 4 2 0 Gain NF 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) Typical on Wafer Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Min Fop Operating frequency range 24 G Small signal gain 14 NF Noise figure P1dB Output power at 1dB gain compression Typ Unit 26.5 GHz 15 1.8 8 Max dB 2.0 10 dB dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA21928155 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24-26.5GHz Low Noise Amplifier CHA2192 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol Fop G ∆G Parameter Min Operating frequency range (1) 24 Small signal gain (1) 14 Small signal gain flatness (1) Typ dB dB NF Noise figure 1.8 VSWRin 2.0 10 Input VSWR (1) dB dBm 2.0:1 VSWRout Output VSWR (1) Id GHz ±1.0 30 8 26.5 dB Reverse isolation (1) Pulsed output power at 1dB compression (1) Unit 15 Is P1dB Max 2.0:1 Bias current 40 60 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 150 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA21928155 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-26.5GHz Low Noise Amplifier CHA2192 Typical On Wafer Scattering Parameters and Noise Figure Bias Conditions : Vd = +3.5V, Id = 40 mA Freq. GHz S11 dB S11 /° S12 dB S12 /° S21 dB S21 /° S22 dB S22 /° 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 -0,11 -0,14 -0,15 -0,18 -0,22 -0,26 -0,33 -0,42 -0,62 -0,86 -0,79 -0,72 -0,92 -1,52 -2,68 -4,24 -5,70 -6,70 -7,06 -7,30 -7,86 -8,82 -10,02 -11,19 -11,90 -11,60 -10,37 -8,73 -7,20 -6,30 -5,14 -4,39 -3,68 -3,28 -2,83 -2,55 -2,20 -1,94 -1,89 -1,54 -15,4 -30,7 -45,8 -61,2 -76,4 -92,1 -107,7 -124,1 -140,9 -157,3 -175,1 162,9 136,4 104,7 67,2 24,8 -19,6 -59,7 -92,2 -117,7 -138,8 -155,5 -165,5 -168,9 -168,4 -163,0 -161,7 -165,0 -172,1 179,4 169,7 159,2 148,6 138,2 127,8 118,2 108,3 98,5 89,3 80,2 -73,89 -74,53 -70,24 -81,19 -73,30 -59,10 -66,55 -62,12 -60,15 -54,22 -49,02 -45,15 -41,76 -38,85 -36,59 -34,81 -33,78 -33,16 -32,74 -32,23 -31,82 -31,31 -30,23 -29,72 -29,12 -28,62 -28,30 -28,02 -27,90 -27,92 -27,87 -27,95 -28,04 -28,28 -28,28 -28,51 -29,15 -29,22 -29,80 -30,02 58,1 35,2 3,8 41,8 31,0 -38,8 -77,6 -115,8 172,5 112,5 44,8 10,1 -22,0 -49,6 -75,1 -99,7 -121,4 -140,0 -154,3 -167,8 -179,5 172,5 161,5 150,2 139,6 128,6 117,8 106,9 96,6 87,0 78,6 67,9 59,8 51,7 42,5 34,7 26,3 21,9 13,5 10,8 -30,22 -32,18 -36,24 -48,79 -36,60 -25,44 -17,39 -7,82 1,09 7,90 11,29 13,12 14,80 16,38 17,54 18,09 18,21 17,92 17,56 17,23 16,98 16,66 16,42 16,20 15,88 15,51 15,14 14,66 14,11 13,48 12,82 12,10 11,34 10,44 9,56 8,63 7,70 6,75 5,76 4,94 153,9 112,1 88,2 92,5 -160,2 11,8 -49,1 -73,1 -105,1 -151,2 162,0 126,0 96,0 67,0 37,5 8,7 -17,0 -40,7 -60,8 -78,9 -96,5 -113,0 -128,7 -144,6 -160,2 -175,2 170,0 155,1 140,7 127,2 113,8 100,8 88,0 76,1 64,1 53,4 43,1 33,5 24,0 14,9 -0,46 -1,19 -2,30 -3,30 -4,78 -5,35 -5,98 -7,15 -9,06 -11,46 -11,65 -11,54 -11,99 -12,57 -12,53 -12,65 -11,76 -12,19 -12,76 -13,95 -15,34 -16,56 -16,82 -16,08 -16,06 -14,23 -13,06 -11,23 -10,29 -9,22 -8,51 -7,82 -7,48 -6,85 -6,58 -6,37 -6,16 -6,17 -5,73 -6,01 -24,8 -48,2 -68,3 -86,2 -104,3 -103,2 -124,0 -138,5 -150,3 -151,2 -145,7 -150,2 -154,2 -155,9 -156,1 -158,0 -161,0 -167,8 -174,9 -174,2 -178,3 -162,6 -160,7 -144,0 -138,8 -130,9 -130,4 -127,6 -131,8 -134,4 -140,7 -140,5 -148,2 -148,1 -156,0 -155,3 -161,7 -161,3 -167,2 -167,7 Ref. : DSCHA21928155 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 NF 2,45 2,41 2,36 2,08 1,79 1,72 1,66 1,64 1,63 1,56 1,49 1,60 1,58 1,65 1,44 1,80 1,56 1,67 1,73 1,92 2,17 Specifications subject to change without notice 24-26.5GHz Low Noise Amplifier CHA2192 Typical on Wafer Measurements Gain, NF, RLoss ( dB ) Bias conditions: Vd=3.5V, Id= 40mA 20,00 Gain 15,00 10,00 NF 5,00 0,00 -5,00 dBS11 -10,00 -15,00 dBS22 -20,00 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency ( GHz ) Typical Bias Tuning for Low Noise Operation For low noise operation, a separate access to the gate voltages of the input stage ( Vgs1 ) and of the output stage ( Vgs2 ) is provided. Nominal bias for low noise operation is obtained for a typical current of 20 mA for the output stage and 10 mA for the input stage ( 30 mA for the amplifier ). The first step to bias the amplifier is to tune the Vgs1 = -1V, and Vgs2 to drive 20 mA for the full amplifier. Then Vgs1 is reduced to obtain 30 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vgs1 bias voltage, but keeping the previous value for Vgs2. Ref. : DSCHA21928155 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-26.5GHz Low Noise Amplifier CHA2192 Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA21928155 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-26.5GHz Low Noise Amplifier CHA2192 Ordering Information Chip form : CHA2192-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA21928155 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice