CHA2293 24.5-29.5GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description V5 The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd Vg1 Vg Vc Typical on wafer measurements :Gain & NF Main Features • • • • • • Frequency range : 24.5-29.5GHz 3dB Noise Figure. 24dB gain Gain control range: 15dB Low DC power consumption, 160mA @ 5V 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Gain (dB) NF (dB) 24 Chip size : 2.32 X 1.23 X 0.10 mm 25 26 27 28 29 Frequency (GHz) Main Characteristics Tamb. = 25°C Parameter Fop Min Operating frequency range Typ 24.5 Max Unit 29.5 GHz G Small signal gain 24 NF Noise figure 3 Gain control range with Vc variation 15 dB Bias current 150 mA Gctrl Id dB 3.5 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22931201 -20-July-01 1/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 30 24.5-29.5GHz LNA VGA CHA2293 Electrical Characteristics for Broadband Operation Tamb = +25°C, V5=Vd= 5V Symbol Fop Parameter Min Operating frequency range G 24.5 Small signal gain (1) ∆G Typ Small signal gain flatness (1) Max Unit 29.5 GHz 24 dB ±1.5 dB dB Is Reverse isolation (1) 50 NF Noise figure with Vc=1.2V 3 Gctrl Gain control range versus Vc 15 dB P1dB Output power at 1dB compression with Vc=1.2V 12 dBm VSWRin VSWRout Vd 3.5 Input VSWR (1) 4.0:1 Output VSWR (1) 2.0:1 DC voltage V5= Vd Vc -1.5 5 [-0.7, 1.2] dB V V 1.3 Id1 Bias current (2) with Vc=1.2V 35 mA Id Bias current total (3) with Vc=1.2V 160 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjust to 35mA with Vg1 voltage. (3) With Id1=35mA, adjust Vg voltage for a total drain current around 160mA. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 5.5 V Vc Control bias voltage 1.5 V Id Drain bias current 250 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22931201 -20-July-01 2/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-29.5GHz LNA VGA CHA2293 Typical on wafer Measurements Bias Conditions : 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 V5=Vd= 5 Volt, Vg1 pour Id1= 35mA, Vg = -0.3V, Vc=1.2V Gain (dB) NF (dB) 24 25 26 27 28 29 30 Frequency (GHz) Gain & Noise Figure versus frequency Bias Conditions : V5=Vd= 5 Volt, Vg1 =Vg = -0.3V 30 Vc=1.2V 25 (dB) 20 15 Vc=-0.5V 10 5 0 24 25 26 27 28 29 30 Frequency (GHz) Control gain range versus frequency Ref. : DSCHA22931201 -20-July-01 3/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-29.5GHz LNA VGA CHA2293 30 24GHz 26GHz 26 28GHz 29GHz 30GHz (dB) 22 18 14 10 -1 -0.5 0 0.5 1 1.5 Control voltage Vc (V) Gain versus control voltage In jig Measurements Bias Conditions : V5=Vd= 5 Volt, Vg1= Vg = -0.3V, Vc= 1.2V All these measurement include the losses from the jig ( about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power). 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 Gain (dB) Pout (dBm) -30 -25 -20 -15 -10 Input power (dBm) Gain & Output power @ 24-26 GHz Ref. : DSCHA22931201 -20-July-01 4/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-29.5GHz LNA VGA 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 CHA2293 Gain (dB) Pout (dBm) -30 -25 -20 -15 -10 Input power (dBm) Gain & Output power @ 28–30 GHz 20 30 18 26 G a i n 16 12 18 14 Vc= +1.2V Vc= +0.8V 10 10 Vc= 0V 8 Gain (dB) Noise Figure (dB) 14 22 6 Vc= -0.4V 6 2 4 -2 NF 2 -6 0 -10 23 25 27 29 31 Frequency ( GHz) Gain & Noise Figure versus Vc Ref. : DSCHA22931201 -20-July-01 5/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-29.5GHz LNA VGA CHA2293 Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad:100 x 100 µm Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22931201 -20-July-01 6/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice CHA2293 Ordering Information Chip form : CHA2293-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22931201 -20-July-01 7/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice