UMS CHA2295

CHA2295
6 - 11GHz Buffer Splitter Amplifier
GaAs Monolithic Microwave IC
Description
OUT 1
The CHA2295 is a broadband buffer splitter
three-stage monolithic amplifier.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
Vd
Vg
IN
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
OUT 2
Typical on wafer measurements : Gain (dB)
20
Main Features
19
18
■ Broadband performance : 6 -11GHz
■ 14dBm saturated output power.
■ 18dB ±1.5dB gain flatness
■ Good broadband matching
■ Low DC power consumption, 160mA @ 3.5V
■ Chip size : 2.26 X 1.33 X 0.10 mm
17
16
15
14
13
12
Gain channel 1
Gain channel 2
11
10
1
2
3
4
5
Main Characteristics
6
7
8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Tamb. = 25°C
Symbol
Fop
G
Psat
Id_small signal
Parameter
Min
Typ
Max
Unit
11
GHz
Operating frequency range
6
Small signal gain
15
18
dB
Saturated Output power
12
14
dBm
Bias current
160
220
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22952240 28-Aug.-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6 -11GHz Buffer Splitter Amplifier
CHA2295
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V Vg tuned for Id=160mA
Symbol
Fop
G
∆G
Parameter
Min
Operating frequency range (1)
6
Small signal gain (1)
15
Small signal gain flatness (1)
Typ
Max
Unit
11
GHz
18
dB
±1.5
dB
Is
Reverse isolation (1)
60
dB
Ic
Isolation between channels (1)
18
dB
+14
dBm
Psat
VSWRin
VSWRout
Saturated output power (1)
+12
Input VSWR (1)
2.0:1
Output VSWR (1)
2.3:1
Id_small signal Bias current
160
220
mA
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vds
Maximum Drain bias voltage
4.0
V
Ids
Maximum drain bias current
250
mA
Vgs
Gate bias voltage
-2.5 to +0.4
V
Vdg
Maximum drain to gate voltage (Vd - Vg))
+5
V
Pin
Maximum input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +125
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA22952240 28-Aug.-02
2/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6 -11GHz Power splitter Amplifier
CHA2295
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions :
Vd = 3.5 Volt, Vg tuned for Id = 160 mA.
Channel Freq.
S11
S11
S12
S12
S21
S21
S22
S22
GHz
dB
/°
dB
/°
dB
/°
dB
/°
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
-9,99
-11,40
-14,42
-19,39
-28,83
-26,94
-20,17
-18,51
-16,84
-15,80
-15,24
-14,62
-14,29
-14,07
-14,04
-13,77
-13,67
-13,20
-10,10
-11,46
-14,44
-19,27
-28,28
-28,07
-20,74
-18,43
-16,88
-15,77
-15,15
-14,66
-14,25
-14,09
-13,95
-13,72
-13,55
-13,12
Ref. : DSCHA22952240 28-Aug.-02
-23,19
-51,53
-77,32
-95,22
-89,06
-0,66
-3,25
-12,26
-26,16
-37,72
-49,47
-59,20
-69,08
-78,21
-88,72
-98,10
-107,19
-114,33
-23,68
-52,43
-78,77
-97,85
-100,60
-1,39
-3,71
-12,22
-24,60
-36,35
-48,51
-58,74
-67,59
-77,41
-87,81
-97,30
-106,71
-113,49
-78,40
-71,37
-67,59
-68,52
-73,27
-72,47
-82,66
-72,76
-85,35
-85,69
-74,62
-70,58
-75,31
-69,21
-85,79
-66,52
-72,49
-65,66
-66,30
-67,31
-68,69
-65,70
-67,02
-72,18
-75,81
-79,88
-74,94
-73,11
-82,43
-76,73
-82,52
-76,72
-66,25
-64,01
-66,64
-63,02
10,36
40,66
-20,60
-83,56
-117,11
-165,16
-122,79
146,76
-114,68
141,79
173,34
-96,70
128,54
178,28
167,97
175,66
149,93
142,16
93,30
28,79
-62,91
-119,11
-145,17
-160,35
-179,95
69,33
45,88
-8,56
24,00
90,61
-148,65
-166,31
-179,04
-169,58
-154,56
-159,40
3/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
-39,63
-18,91
-0,96
10,46
15,86
18,12
18,91
18,64
18,12
18,15
17,21
16,66
16,03
15,09
14,48
13,87
13,10
12,59
-39,21
-18,83
-1,06
10,39
15,87
18,27
19,04
18,74
18,36
18,37
17,50
17,01
16,33
15,50
15,04
14,55
13,82
13,27
-173,20
151,80
96,83
17,07
-58,60
-122,96
-176,92
138,91
101,55
65,89
35,53
8,26
-17,92
-42,30
-63,68
-85,83
-107,30
-127,20
-173,66
148,76
96,10
17,00
-57,50
-121,68
-175,14
141,17
103,74
68,22
37,59
10,22
-14,57
-38,87
-60,92
-83,10
-104,53
-125,54
-0,23
-0,85
-2,75
-7,20
-16,28
-22,39
-14,77
-13,00
-11,93
-11,84
-11,55
-11,58
-11,65
-11,81
-12,01
-12,31
-12,64
-12,86
-0,15
-0,82
-2,73
-7,27
-16,20
-23,31
-15,12
-13,30
-12,12
-12,15
-11,99
-11,43
-11,97
-11,43
-11,19
-11,61
-12,21
-11,35
-25,89
-55,20
-89,94
-127,32
-171,08
33,97
-9,33
-28,21
-42,62
-55,01
-66,76
-77,70
-88,23
-99,83
-109,75
-120,01
-133,87
-145,18
-25,79
-55,20
-89,32
-126,53
-169,15
32,29
-10,67
-29,59
-41,54
-51,48
-66,12
-74,91
-82,63
-96,13
-102,57
-114,19
-126,36
-140,14
Specifications subject to change without notice
6 -11GHz Buffer Splitter Amplifier
CHA2295
Typical On wafer Measurements
Bias Conditions :
Vd = 3.5 Volt, Vg tuned for Id = 160 mA.
Gain for each channel versus frequency (dB)
20
19
18
17
16
15
14
13
12
Gain channel 1
Gain channel 2
11
10
1
2
3
4
5
6
7
8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Isolation between channels versus frequency (dB)
35
33
31
29
27
25
23
21
19
17
15
1
2
3
4
5
Ref. : DSCHA22952240 28-Aug.-02
6
7
8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
4/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6 -11GHz Power splitter Amplifier
CHA2295
Gain & Return Loss channel 1 versus frequency (dB)
18
14
10
6
2
S21
S11
S22
-2
-6
-10
-14
-18
-22
-26
1
2
3
4
5
6
7
8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Gain & Return Loss channel 2 versus frequency (dB)
18
14
10
6
2
S21
-2
S11
S22
-6
-10
-14
-18
-22
-26
1
2
3
4
5
Ref. : DSCHA22952240 28-Aug.-02
6
7
8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
5/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
CHA2295
6 -11GHz Buffer Splitter Amplifier
Chip Assembly and Mechanical Data
RF Out 1
To Vd DC Drain supply feed
120pF
RF In
120pF
RF Out 2
To Vg DC Gate supply feed
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended.
Bonding pad positions.
( Chip thickness : 100µm. DC pads : 100*100 µm². All dimensions are in micrometers )
Ref. : DSCHA22952240 28-Aug.-02
6/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6 -11GHz Power splitter Amplifier
CHA2295
Ordering Information
Chip form
:
CHA2295-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA22952240 28-Aug.-02
7/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice