CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography. Vg Vd It is available in chip form. IN Main Features OUT ¦ Broadband performance : 9-10.5GHz ¦ 27dBm output power (pulsed meas., -1dB gain compression) ¦ 15dB gain ¦ ± 1.5dB gain flatness ¦ Chip size : 2,09 x 1,27 x 0.10 mm Main Characteristics Tamb. = 25°C Symbol Fop G Pout Parameter Min Typ Max Unit 10.5 GHz Operating frequency range 9 Small signal gain 14 15 dB Output power (Pulsed meas., Pin = +13dBm) 26 27 dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA50100096 - 05-Apr-00 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X Band Driver Amplifier CHA5010b Electrical Characteristics (1) Tamb = +25°C, Vd = 8V, Vg = -1.5V Symbol Fop G ∆G Parameter Min Operating frequency range 9 Small signal gain @ Pin = +5dBm 14 Small signal gain flatness P1db Pulsed output power @ Pin = +13dBm PAE Power added efficiency at saturation VSWRin Id 26 Typ Max Unit 10.5 GHz 15 dB ± 1.5 dB 27 dBm 15 % Input VSWR (2) 2.0:1 Bias current 520 mA (1) These values are representative of on-wafer pulsed measurements that are made without bonding wires at the RF ports. (2) Vd = 3.5V, Vg = -1.5V, [S] parameter measurements. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Vd Pdiss Parameter Positive supply voltage Unit +10 V 7.0 @ Ta = +25°C 4.3 @ Ta = +70°C Maximum power dissipated Vg Negative supply voltage Pin Maximum peak input power overdrive (2) Ta Tstg Values W -3.5 to 0 V +20 dBm Operating temperature range -25 to +70 °C Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA50100096 - 05-Apr-00 2/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5010b Typical On Wafer Scattering Parameters Tamb = +25°C, Bias Conditions : Vd = +3.5V, Vg = -1.5V Freq. GHz 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 S11 dB S11 /° S12 dB S12 /° S21 dB S21 /° S22 dB S22 /° -5.35 -3.66 -2.44 -1.64 -1.23 -1.14 -1.35 -1.85 -2.76 -4.02 -5.77 -9.90 -30.64 -16.21 -17.14 -16.15 -14.23 -14.32 -12.68 -9.50 -7.26 -5.60 -4.23 -3.17 -2.32 -1.69 -1.28 -0.91 -0.69 -0.54 -0.43 -0.40 -0.38 -109.2 -124.6 -139.2 -153.7 -168.0 178.2 164.6 150.7 136.2 121.9 103.0 70.0 -156.2 158.2 154.5 161.7 140.0 79.1 -4.8 -53.5 -78.7 -94.5 -106.5 -117.0 -126.3 -134.9 -142.7 -149.7 -155.9 -161.7 -166.8 -171.6 -175.6 -55.93 -49.08 -55.27 -65.52 -65.41 -66.55 -62.69 -63.21 -61.27 -52.79 -45.72 -38.39 -33.93 -34.35 -34.69 -34.10 -32.64 -32.41 -34.15 -37.14 -40.31 -43.56 -46.48 -49.61 -51.81 -54.83 -59.52 -62.73 -61.49 -68.06 -58.31 -58.30 -63.76 -22.8 -104.8 146.9 -164.9 174.6 111.1 58.7 17.3 25.1 -30.6 -76.9 -139.7 139.3 72.7 26.2 -15.8 -63.2 -118.3 -174.5 140.8 103.6 69.4 44.1 13.0 -18.7 -53.3 -66.4 -147.8 170.2 127.7 125.2 126.4 97.9 -17.94 -12.92 -22.15 -32.08 -41.95 -55.23 -41.77 -24.61 -7.89 0.85 6.90 13.60 17.69 16.58 15.54 15.56 16.05 15.80 13.21 9.36 5.50 1.81 -1.77 -5.36 -8.95 -12.57 -16.24 -19.95 -24.09 -28.46 -33.59 -38.98 -45.29 61.1 -13.8 -111.5 -148.9 173.3 170.7 -130.7 -130.4 177.7 102.2 45.0 -16.2 -100.9 -171.5 138.6 93.0 42.9 -15.8 -75.2 -123.9 -164.3 159.5 125.7 93.8 63.3 33.7 4.8 -24.0 -53.2 -82.7 -109.6 -136.5 -159.7 -0.89 -5.12 -1.14 -0.66 -0.79 -1.10 -1.69 -2.70 -4.52 -7.17 -9.17 -6.75 -7.63 -17.46 -10.44 -6.80 -5.52 -6.78 -9.67 -8.56 -6.54 -5.09 -4.02 -3.23 -2.58 -2.06 -1.66 -1.34 -1.07 -0.85 -0.69 -0.56 -0.45 -113.5 -132.4 -127.3 -148.8 -166.6 175.7 157.1 135.3 107.9 70.7 6.2 -76.9 -155.2 -143.4 -121.2 -145.7 177.5 121.5 41.0 -26.9 -61.6 -81.6 -95.5 -105.9 -114.3 -121.6 -128.1 -134.2 -139.8 -145.0 -149.6 -154.0 -157.7 Ref. : DSCHA50100096 - 05-Apr-00 3/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5010b Chip Mechanical Data 74 Gnd 456 990 426 74 Vd Vg1 1270 ± 35 1120 IN OUT UMS 450 355 2090 ± 35 All dimensions are in micrometers Pads : 100µm x 100µm Thickness: 100µm ± 10µm Ordering Information Chip form : CHA5010b99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50100096 - 05-Apr-00 4/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice