SIDE LOOK PACKAGE NPN PHOTODETECTOR Description MID-11H22 Package Dimensions Unit: mm ( inches ) The MID-11H22 is a NPN silicon phototransistor mounted 4.45±0.12 (.175±.005) in a lensed , special dark plastic and side looking package. 2.22 (.087) 0.76 (.030) 1.22±0.07 (.048±.003) 5.72±0.12 (.225±.005) 1.55±0.12 (.061±.005) Features 12.70 MIN. (.500) l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l Good spectral matching to IRED (λp >800 nm) type. 0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 (.100) E C Notes : 1. Tolerance for excess molding compound is ± 0.005". 2. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260 C for 5 seconds o Unity Opto Technology Co., Ltd. 04/04/2002 MID-11A22 Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Symbol Min. Typ . V(BR)CEO 30 V V(BR)ECO 5 V Collector-Emitter Ic=0.1mA Breakdown Voltage Ee=0 Emitter-Collector Ie=0.1mA Breakdown Voltage Ee=0 Collector-Emitter Ic=0.5 mA Saturation Voltage Ee=0.1mW/cm2 Rise Time VR =30V , 0=1KΩ Tr 15 Fall Time Collector Dark Current On State Collector Current IC=1mA VCE=10V Tf 15 VCE(SAT) IC Normalized Collector Current 120 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 160 120 80 40 0 0 2 4 6 8 10 -75 -25 25 75 125 5 Vce = 5 V 4 3 2 1 0 0 1 2 3 4 5 6 2 Ee - Irradiance - mW/cm FIG.4 RELATIVE COLLECTOR CURRENT 0° 10° 20° VS IRRADIANCE RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE Relative Sensitivity Vce =5 V Ee =0.1 mW/cm2 @λ= 940 nm TA - Ambient Temperature -oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE TA - Ambient Temperature - oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 nA mA 4 3.5 3 2.5 2 1.5 1 0.5 0 Relative Collector Current Tr Tf Rise and Fall Time - µS Iceo-Collector Dark Current -µA 1000 100 10 1 0.1 0.01 0.001 80 µS 0.38 Typical Optical-Electrical Characteristic Curves 40 V 100 IC(ON) Ee=0.1mW/cm2 Unit 0.4 ICEO Ee=0 VCE=5V 0 Max. 30° 40° 50° 60° 70° 80° 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 04/04/2002