T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-33H22 Package Dimensions The MID-33H22 is a NPN silicon phototransistor mou- Unit: mm ( inches nted in a lensed, special dark plastic package. The lens- ψ3.00 (.118) ing effect of the package allows an acceptance half view 4.00 (.157) angle of 15° that is measured from the optical axis to the half sensitivity point . 5.25 (.207) 1.00 (.040) 0.80±0.50 (.032±.020) FLAT DENOTES COLLECTOR 23.40MIN. (.920) 0.50 TYP (.020) Features 1.00MIN (.040) l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l compatible IRED : 850 nm or above l Acceptance view angle : 30o 2.54 (.100) C E Notes : 1. Tolerance is ± 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 0.8 mm (.031") max 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-33H22 Optical-Electrical Characteristics @ TA=25oC Test Conditions Collector-Emitter Ic=0.1mA Breakdown Voltage Ee=0 Emitter-Collector Ie=0.1mA Breakdown Voltage Ee=0 Collector-Emitter Ic=0.5mA, λ=850nm Saturation Voltage Rise Time Ee=0.1mW/cm2 VCC =5V, RL=1KΩ Fall Time IC=1mA Collector Dark VCE=10V Current Ee=0 On State Collector VCE=5V, λ=850nm Current Ee=0.1mW/cm2 Symbol Min. V(BR)CEO 30 V V(BR)ECO 5 V 15 Tf 15 ICEO 40 80 120 TA- Ambient Temperature -oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 160 120 80 40 0 0 2 4 6 8 10 RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE Unit V µS 100 IC(ON) nA 2 4.0 3.5 Vce = 5 V 2 3.0 Ee = 0.1 mW/cm 2.5 @λ= 850 nm 2.0 1.5 1.0 0.5 0.0 -75 -25 25 mA 75 125 TA - Ambient Temperature - oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE Relative Collector Current (mA) Iceo-Collector Dark Current -µA Tr Tf Rise and Fall Time - µS 1000 100 10 1 0.1 0.01 0.001 Max. 0.4 Tr Typical Optical-Electrical Characteristic Curves 0 Typ . VCE(SAT) IC Normalized Collector Current Parameter 10 Vce = 5 V 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 2 Ee - Irradiance - mW/cm FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE Relative Sensitivity 0° 10° 20° 30° 40° 50° 60° 70° 80 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002