GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-544H4 Package Dimensions The MIE-544H4 is a GaAlAs infrared LED having a Unit: mm (inches) φ5.05 (.200) peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher 5.47 (.215) radiant intensity. In addition to improving the S/N ratio 7.62 (.300) in applied optical systems, the MIE-544H4 has greatly 5.90 (.230 improved long-distance characteristics as well as sign1.00 (.040) ificantly increased its range of applicability. SEE NOTE 2 FLAT DENOTES CATHODE Features l Ultra-high radiant intensity l High response speed l Standard T-1 3/4 ( φ 5mm ) package l Peak wavelength λp = 850 nm l 23.40 MIN (.920) 0.50 TYP. (.020) 1.00MIN. (.040) 2.54NOM. (.100) Radiant angle : 40° SEE NOTE 3 A Application l Data communication l SIR C Notes : 1.Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2.Protruded resin under flange is 1.5 mm (.059") max. 3.Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings '@ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Maximum Rating Unit 120 mW 1 A 100 mA 5 V o o o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55 C to +100 C Lead Soldering Temperature o 260 C for 5 seconds Unity Opto Technology Co., Ltd. 11/17/2000 MIE-544H4 Optical-Electrical Characteristics o @ TA=25 C Parameter Test Conditions Symbol Min. Typ . Max. Unit Radiant Intensity IF=50mA Ie 3.0 Forward Voltage IF=50mA VF 1.5 Reverse Current VR=5V IR Peak Wavelength IF=20mA λp 850 nm Spectral Bandwidth IF=20mA ∆λ 30 nm View Angle IF=20mA 2θ1/2 40 deg . Rise Time Fall Time IF=50mA IF=50mA Tr Tf 20 30 nsec nsec mW/sr 1.8 V 100 µA Relative Radiant Intensity Typical Optical-Electrical Characteristic Curves 1 0.5 0 750 850 950 Forward Current (mA) 100 80 60 40 20 0 1.2 1.6 2.0 2.4 2.8 Forward Voltage (V) FIG.2 FORWARD CURRENT VS. FORWARD VOLTAGE 3 2.5 2 1.5 1 0.5 0 -40 -20 0 20 40 60 Ambient Temperature TA (oC) FIG.3 RELATIVE RADIANT INTENSITY VS. VS. AMBIENT TEMPERATURE 0° 10° 20° 5 Relative Radiant Intensity Out Put Power Relative To Value at IF=20mA 0.8 Out Put Power To Value IF=20mA Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION 4 3 2 1 0 0 20 40 60 80 100 Forward Current (mA) 30° 40° 50° 60° 70° 80° 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 RADIATION DIAGRAM FIG.4 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT Unity Opto Technology Co., Ltd. 11/17/2000