UOT MIE

AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
MIE-814A2
Package Dimensions
Unit: mm ( inches )
The MIE-814A2 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
6.70±0.20
(.264±.008)
φ 5.00±0.20
(.197±.008)
1.30 max
(.051)
2.00(.079)
Features
l
28 typ
(1.102)
0.50
(.020)
High radiant power and high radiant intesity
l
Suitable for DC and high pulse current operation
l
Peak wavelength λP =940 nm
l
Good spectral matching to Si-Photodetector
2.00±1.00
(.079±.039)
2.54NOM.
(.100)
A
C
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ TA=25 C
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Maximum Rating
Unit
150
mW
1
A
100
mA
5
V
o
o
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55 C to +100 C
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-814A2
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Symbol
Min.
Typ .
1
2
Max.
Unit
Radiant Intensity
IF=20mA
Ie
Forward Voltage
IF=50mA
VF
Reverse Current
VR=5V
IR
Peak Wavelength
IF=20mA
λ
940
nm
Spectral Bandwidth
IF=20mA
∆λ
50
nm
View Angle
IF=20mA
2 θ1/2
50
deg .
mW/sr
1.32
1.45
V
100
µA
1
Forward Current IF (mA)
Relative Radiant Intensity
Typical Optical-Electrical Characteristic Curves
0.5
0
840
940
1040
60
40
20
0
0
1.2
1.6
2.0
2.4
2.8
3
2
1
0
0
20
40
60
80
100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
60
50
0
0
25
50
0
20
75 100 125
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-20
40
60
Ambient Temperature TA (oC)
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Relative Radiant Intensity
Output Power Relative To
Value at IF=20mA
4
70
-40
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
5
80
Ambient Temperature TA (oC)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
Output Power To Value IF=20mA
Forward Current (mA)
80
90
-55 -25
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
100
100
0° 10°
20°
30°
40°
50°
60
70°
80°
90°
1.0
0.9
0.8
0.5 0.3 0.1 0.2 0.4 0.6
FIG.6 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002