SUBMINIATURE PHOTOINTERRUPTER MIR-3301 Description Package Dimensions sistor built in a black plastic housing. It is a reflective subminiature photointerrupter. 3.4±0.2 1.80 A D B Unit: mm ( Detector center ) frared emitting diode and a NPN silicon phototran- ( Emitter center ) The MIR-3301 consists of a Gallium Arsenide in- A D B C C Features l MIR-3301 : Compact DIP, long lead type l Optimum detecting diatance : 0.8 - 1.0 mm l Wavelength : 940nm l Visible light cut-off type 0.5±0.1 ±15° 0.65 10±1.0 Compact and thin 1.5±0.2 2.75±0.2 l 0.15 4.0 ±15° 0~20° 0~20° Absolute Maximum Ratings @ TA=25oC Parameter INPUT Symbol Minimum Rating Maximum Rating Unit Continuous Forward Current IF 50 mA Reverse Voltage VR 5 V Power Dissipation Pad 75 mW Collector-emitter breakdown voltage V(BR)CEO 30 V OUTPUT Emitter-Collector breakdown voltage V(BR)ECO 5 V PC 75 mW Total power dissipation PTOT 100 mW Operating Temperature Range Topr -25oC to + 85oC Storage Temperature Range Tstg -40oC to + 100oC Collector power dissipation Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260oC Unity Opto Technology Co., Ltd. 02/04/2002 MIR-3301 Optical-Electrical Characteristics Parameter Input Min . Typ . Max . Unit . - 1.2 1.4 V IF=20mA IR - - 10 µA VR=5V Iceo B - - 100 nA Vce=10V 38 - 75 C 56 - 108 D µA IF=4mA,Vce=5V 80 - 151 E 112 - 20 20 - 216 100 100 0.1 µS µS µA Ic=100µA,Vce=2V RL=1K,d=1mm IF=4mA,Vce=5V Symbol VF Forward Voltage Reverse Current Output Collector Dark Current *1 Transfer Characteristics Ic Collector Current Response Time (RISE) Response Time (FALL) *2 Leak Current tr tf ILEAK Test Conditions *1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING . *2 WITHOUT REFLECTIVE OBJECT. TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT Al refletive 2 mm-thick glass Device Power Dissipation (mW) Forward Current IF (mA) Typical Optical-Electrical Characteristic Curves 60 50 40 30 20 10 0 -25 0 25 50 75 120 PTOT 100 Pad , PC 80 60 40 20 0 100 -25 40 30 20 10 0 0.5 1 Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage 25 50 75 100 o 50 0 0 Ambient Temperature TA ( C ) Fig.2 Power Dissipation vs. Ambient Temperature Collector Current Ic (µA) Forward Current IF (mA) Ambient Temperature TA (oC) Fig.1 forward Current VS. Ambient Temperature 1.5 600 Vce=5V 500 Ta=25oC 400 300 200 100 0 0 5 10 15 20 Forward Current IF (mA) Fig.4 Collector Current vs. Forward Current Unity Opto Technology Co., Ltd. 02/04/2002 MIR-3301 Relative Collector Current (%) Collector Current Ic (µA) Typical Optical-Electrical Characteristic Curves 350 Ta=25oC 300 IF=10mA 250 200 4mA 150 100 50 1mA 0 0 2 4 6 8 10 12 120 100 80 60 40 20 0 -25 Response Time (µs) Collector Dark Current ICEO 10-8 -9 10 10-10 25 50 75 20 10 2 1 ts 0.5 Relative Collector Current (%) Relative Sensitivity (%) 40 20 0 1100 0.1 0.2 0.1 11 0.5 2 1010 5 Load Resistance Rt (KΩ) Fig.8 Response Time vs. Load Resistance 60 1000 VCE=2V IC=100μA Ta=25oC 0.2 0.1 0.01 0.01 0.02 0.05 80 900 td tr 5 100 Ta=25oC 800 100 tr 50 Ambient Temperature TA (oC) Fig.7 Collector Dark Current vs. Ambient Temperature 700 75 100 10-7 100 50 Ambient Temperature TA ( C) Fig.6 Relative Collector Current VS. VCE=10V 0 25 o Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce 10-6 0 1200 120 100 IF=4mA VCE=5V 80 TA=25oC 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 Distance (mm) Fig.10 Relative Collector Current vs. Distance between MIR-3301 and Card Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) Test Circuit for Response Time Vcc RL Input RD Input Output Output 10% 90% td ts tr tf Unity Opto Technology Co., Ltd. 02/04/2002