VAISH G2SB20

G2SB20 thru G2SB80
Vishay Semiconductors
New Product
formerly General Semiconductor
Glass Passivated Single-Phase
Bridge Rectifier
Reverse Voltage 200 to 800V
Forward Current 1.5A
Case Type GBL
0.825 (20.9)
0.815 (20.7)
0.125 (3.17)
x 45 degrees
Chamfer
Features
0.421 (10.7)
0.411 (10.4)
0.080 (2.03)
0.060 (1.50)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.043 (1.1)
0.035 (0.9)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• This series is UL listed under the Recognized
Component Index, file number E54214
• High case dielectric strength
• Ideal for printed circuit boards
• Glass passivated chip junction
• High surge current capability
• High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
Mechanical Data
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76)
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight: 0.071 oz., 2.0 g
Packaging codes/options:
1/400 EA. per Bulk Tray Stack, 4K/box
0.140 (3.56)
0.128 (3.25)
0.022 (0.56)
0.018 (0.46)
Polarity shown on front side of case, positive lead beveled corner.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
G2SB20
G2SB60
G2SB80
Unit
Maximum repetitive peak reverse voltage
VRRM
200
600
800
V
Maximum RMS voltage
VRMS
140
420
560
V
Maximum DC blocking voltage
VDC
200
600
800
V
Maximum average forward
rectified output current at TA = 25°C
IF(AV)
1.5
A
Peak forward surge current single
sine-wave superimposed on rated load (JEDEC Method)
IFSM
80
A
I2t
27
A2sec
RθJA
RθJL
40
12
°C/W
TJ, TSTG
–55 to +150
°C
Rating for fusing (t<8.3ms)
Typical thermal resistance per leg
Operating junction storage and temperature range
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Maximum instantaneous forward voltage
drop per leg at 0.75 A
Maximum DC reverse current at rated
DC blocking voltage per leg
TA = 25°C
TA =125°C
G2SB20
G2SB60
G2SB80
Unit
VF
1.00
V
IR
5.0
300
µA
Note: (1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
Document Number 88603
21-Mar-02
www.vishay.com
1
G2SB20 thru G2SB80
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Derating Curve Output
Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Leg
100
Peak Forward Surge Current (A)
Average Forward Output (IF(AV) )
2
P.C.B. Mounting, TA
1.5
1
0.5
0
80
60
40
20
1.0 Cycle
0
0
25
50
75
100
125
1
150
100
Number of Cycles at 60 Hz
Temperature (°C)
Fig. 3 - Typical Forward Characteristics
Per Leg
Fig. 4 - Typical Reverse Characteristics
Per Leg
100
Instantaneous Reverse Current ( A)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
TA = 125°C
10
1
0.1
TA = 25°C
0.01
0.6
1
1.4
1.8
2.2
2.6
3
0
3.4
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Junction Capacitance
Per Leg
40
60
80
100
Fig. 6 - Typical Transient Thermal
Impedance
Transient Thermal Impedance (°C/W)
100
Junction Capacitance (pF)
20
Percent of Rated Peak Reverse Voltage (%)
10
1
100
10
1
0.1
0.01
0.1
1
10
Reverse Voltage (V)
www.vishay.com
2
100
0.01
0.1
1
10
100
t, Heating Time (sec.)
Document Number 88603
21-Mar-02
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.