VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Features Applications • Rise Times Less Than 100ps • SONET/SDH @ 622Mb/s, 1.244Gb/s, 2.488Gb/s, and 3.125Gb/s • High Speed Operation (Up to 3.2Gb/s NRZ Data) • Full Speed Fibre Channel (1.062Gb/s) • Differential or Single-Ended Inputs • Single Supply • ECL Compatible Clock and Data Inputs • Direct Access to Modulation and Bias FETs • Data Density Monitors • On-chip Reclocking Register • On-chip Mux for Clocked or Non-clocked Applications • On-chip 50Ω Input Termination: Clock and Data • Enhanced Pinout General Description The VSC7928 is a single 5V supply, 3.2Gb/s laser diode driver with direct access to the laser modulation and bias FETs. Laser bias and modulation currents are set by external components allowing precision monitoring and setting of the current levels. Data density outputs are provided to allow the user to adjust the laser bias in high unbalanced data applications. Clock and data inputs are differentially terminated to 50Ω. VSC7928 Block Diagram MK IOUT NMK NIOUT DIN D Q 50 Ω** M U X IBIAS DINTERM* 50 Ω** NDIN IMOD DCC IBIAS VIP CLK 50 Ω** CLKTERM* 50 Ω ** VIB NCLK SEL MIP MIB *Terminated to Off-chip Capacitor **On Die Components G52246-0, Rev 3.0 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Table 1: Signal Pin Reference Signal Type Level # Pins DIN, NDIN MK, NMK NIOUT IOUT VSS GND In Out Out Out Pwr Pwr ECL ECL Pwr Pwr 2 2 1 1 2 5/6(1) VIP MIP VIB MIB IBIAS CLK, NCLK DINTERM CLKTERM DCC SEL GND/NC In In In In Out In In In In In Pwr DC DC DC DC DC ECL DC DC DC DC DC 1 1 1 1 1 2 1 1 1 1 7(1) Total Pins — — 24/32* — — Description Data Input and Data Reference, On-chip 50Ω Termination Data Density Differential Outputs Laser Modulation Current Output (Complementary) Laser Modulation Current Output (To Laser Cathode) Negative Voltage Rail Positive Voltage Rail Modulation Gate Node Modulation Source Node Bias Gate Node Bias Source Node Laser Bias Output (To Laser Cathode) Clock Input and Clock Reference, On-chip 50Ω Termination Data Reference Clock Reference Duty Cycle Control, Leave Floating Clk/Non-clk Data Select No connection (leave floating or connect to GND) NOTE: (1) Applicable to 32-pin TQFP package only. Table 2: Mux Select Logic Table SEL Mode Select VSS GND Clocked Data In Non-clocked Data In N/C Non-clocked Data In Table 3: Absolute Maximum Ratings Symbol Rating Limit VSS Negative Power Supply Voltage VCC to -6.0V TJ Maximum Junction Temperature -55°C to + 125°C TSTG Storage Temperature -65°C to +150°C Table 4: Recommended Operating Conditions Symbol Parameter Min Typ Max Units GND Positive Voltage Rail — 0 — V VSS Negative Voltage Rail -5.5 -5.2 -4.9 V — — (2) 85 °C 125 °C (1) TCl Operational Temperature -40 TJ Junction Temperature — Conditions Power dissipation = 1.3W NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See section “Calculation of the Maximum Case Temperature” for detailed maximum temperature calculations. Page 2 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52246-0, Rev 3.0 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Table 5: High Speed Inputs and ECL Outputs Symbol Parameter VIN Single-ended Input Voltage Swing Min Typ Max Units Conditions 300 — 1500 mVp-p VCM = -2.0V VCM Differential Input Common Mode Range -2.3 — -1.3 V VSS = -5.2V VOH ECL Output High Voltage -1200 — — mV 50Ω to -2.0V VOL ECL Output Low Voltage — — -1600 mV 50Ω to -2.0V VIN On-Chip Terminations 35 — 65 Ω Table 6: Power Dissipation Symbol Parameter Min Typ Max Units Conditions IVSS Power Supply Current (VSS) — 80 120 mA VSS = -5.5V, IMOD = IBIAS = 0mA, MK/NMK open circuit PD Total Power Dissipation — — 700 mW VSS = -5.5V, IMOD = IBIAS = 0mA, RLOAD = 25Ω to GND, MK/NMK terminated 50Ω to -2V Min Typ Max Units Conditions 100 mA Table 7: Laser Driver DC Electrical Specifications Symbol Parameter IBIAS Programmable Laser Bias Current 2 — IMOD Programmable Modulation Current 2 — 100 mA V IBIAS = 50mA VIB Laser Bias Control Voltage — — VSS + 2.1 VIP Laser Modulation Control Voltage — — VSS + 2.1 V IMOD= 60mA VOCM Output Voltage Compliance — GND 3V — V VSS = -5.2V Min Typ Max Units Table 8: Laser Driver AC Electrical Specifications Symbol Parameter Conditions tR, tF Output Rise and Fall Times — — 100 ps 25Ω load, 20%-80%, 20mA < IMOD < 60mA, IBIAS = 60mA tSU Data to Clock Setup Time — 50 90 ps — tH Hold Time 20 50 — ps — G52246-0, Rev 3.0 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Figure 1: On-Chip Data and Clock Input Configuration GND DIN (CLK) DINTERM (CLKTERM) NDIN (NCLK) GND DATA BUFFER (CLOCK BUFFER) X 50 * 4.0K * 50 * 6.4K * X X *On-chip Components VSS VSS DINTERM to -2.0V for Differential ECL Inputs Figure 2: Single-Ended Operation 7928 0.1µf DATA SOURCE DIN DINTERM NDIN 0.1µf 0.1µf GND CLOCK SOURCE GND CLK CLKTERM NCLK 0.1µf 0.1µf GND Page 4 0.1µf GND © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52246-0, Rev 3.0 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Figure 3: Single-Ended AC-Coupled GND DIN (CLK) 0.1µf X SOURCE DINTERM (CLKTERM) 0.1µf NDIN (NCLK) 50 4.0K 50 6.4K X -2.0V X 0.1µf GND VSS GND Figure 4: Differential AC-Coupled GND 0.1µf DIN (CLK) X SOURCE 0.1µf DINTERM (CLKTERM) 50 -2.0V X NDIN (NCLK) 0.1µf 4.0K 50 6.4K X GND VSS Figure 5: Differential DC-Coupled GND DIN (CLK) X SOURCE DINTERM (CLKTERM) 50 -2.0V X NDIN (NCLK) 4.0K 50 6.4K X -2.0V G52246-0, Rev 3.0 04/05/01 VSS © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Figure 6: Control Signals VIP and VIB I (MIB) 30 mA VIB VSS + 1.5 Volts (Typical) Typical Bias Current v.s. Bias Voltage I (MIP) 60 mA VIP VSS + 1.5 Volts (Typical) Typical Modulation Current v.s. Modulation Voltage Figure 7: Simplified Output Structure NIOUT X VIP IOUT X X OUTPUT DIFF PAIR X IMOD Page 6 IBIAS X VIB IBIAS X X MIP MIB © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52246-0, Rev 3.0 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Figure 8: Pad Assignments for VSC7928 Die 1720µm 50µm 120 120µm 150µm 30µm 50µm 1620µm 50µm PAD 34 PAD 33 PAD 32 PAD 31 PAD 30 PAD 29 PAD 28 PAD 27 PAD 26 DCC VSS VSS VSS VSS VIP MIP MIP MIB PAD 1 N/C PAD 25 VIB PAD 2 NDIN PAD 24 GND PAD 3 DIN PAD 23 IOUT PAD 4 DINT PAD 22 IOUT PAD 5 CLOCKT PAD 21 NIOUT PAD 6 CLOCK PAD 20 NIOUT PAD 7 NCLOCK PAD 19 GND PAD 8 N/C PAD 18 IBIAS 1620µm SEL PAD 9 G52246-0, Rev 3.0 04/05/01 GND GND GND GND GND NMARK MARK PAD 11 PAD 12 PAD 13 PAD 14 PAD 15 PAD 16 PAD 17 1620µm x 1620µm 1720µmx1720µm (after the die are cut up) 120µm x 120µm 150µm 50µm Die Size: Actual Die Size: Pad Size: Pad Pitch: Space Between Pads: GND PAD 10 1720µm 30µm © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Package Information - 32 Pin Plastic TQFP Package Note: Page 8 Dimension mm Tolerance A 1.60 MAX A1 .10 ±.05 A2 1.40 ±.05 D 9.00 ±.20 D1 7.00 ±.10 E 9.00 ±.20 E1 7.00 ±.10 L .60 +.15/-.10 e .80 BASIC ±.05 b .35 θ 0º - 7º ddd .20 MAX ccc .10 MAX Package lid and bottom heat spreader are electrically connected to GND within the package. © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52246-0, Rev 3.0 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver GND MIB MIP VIP VSS VSS DCC GND 32-Pin Plastic Package Pin Designation GND GND NDIN VIB GND DIN IOUT DINT NIOUT CLKT CLK GND NCLK GND IBIAS G52246-0, Rev 3.0 04/05/01 GND MK NMK GND GND GND SEL GND GND © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7928 SONET/SDH 3.2Gb/s Laser Diode Driver Ordering Information The order number for this product is formed by a combination of the device number, and package style. VSC7928 XX Device Type VSC7928: 3.2Gb/s Laser Diode Driver Package Style RA: 32-Pin QFP Gull Wing Plastic Package X : Bare Die Notice Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All information in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited. Page 10 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52246-0, Rev 3.0 04/05/01