2SD1878 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-3PML PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V Tmb 25 IC = 4.0A; IB = 1.2A f = 16KHz IF = 4.0A IC=4A,IB1=-IB2=1.2A,VCC=140V MIN MAX 1500 600 5 10 60 5 2.0 1.0 UNIT V V A A W V A V s MIN -55 - MAX 1500 600 5 10 2 3 60 150 150 UNIT V V A A A A W MIN - MAX 1.0 2.0 UNIT mA mA - LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES PARAMETER Collector cut-off current Switching times(16KHz line deflecton circuit) CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 4.0A; IB = 1.2A IC = 4.0A; IB = 1.2A IC = 1A; VCE = 5V IF = 4.0A IC = 0.1A; VCE = 10V VCB = 10V IC=4A,IB1=-IB2=1.2A,VCC=100V Turn-off storage time Turn-off fall time IC=4A,IB1=-IB2=1.2A,VCC=100V VCEOsust Collector-emitter sustaining voltage VCEsat VBEsat hFE VF fT Cc ts tf Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] 8 3 V 5 1.5 30 2.0 125 4.5 1.0 V V V MHz pF s s