SILICON NPN TRIPLE DIFFUSED MESA TYPE MJE13002A APPLICATION: ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT MAXIMUM RATINGS (Tc=25⊥) CHA RA CTERISTIC SYM BOL RA TING UNIT Co llecto r-Bas e Vo ltag e VCBO V Co llecto r-Emitter Vo ltag e V CE O Emitter-Bas e Vo ltag e V E BO Ju n ctio n Temp eratu re T(vj) 600 400 9 1 20 150 Sto rag e Temp eratu re Ran g e Tstg -55~+150 Co llecto r Cu rren t Ic Co llecto r Po wer Dis s ip atio n Pc V V A W ℃ TO-126 ℃ ELECTRICAL CHARACTERISTICS (Tc=25⊥) CH A RA CT ERIST IC SYMBOL TEST CONDITION MIN. MAX. UNIT Co lle c to r-Emitte r Su s ta in in g Vo lta g e VCE O (s us ) Ic =10m A , IB =0 400 - V Co lle c to r-Ba s e Bre a kd o w n Vo lta g e V(BR)CBO I E = 0 , Ic= 1m A 600 - V Emitte r-Ba s e Bre a kd o w n Vo lta g e V(BR) E BO I E =1mA , I C =0 9 - V Co lle c to r-Ba s e Cu t o ff c u rre n t I CBO VCB =600V IE =0 - 100 μA Co lle c to r-Emitte r Cu t o ff Cu rre n t I CE O VCE =400V IB =0 Emitte r-Ba s e Cu t o ff Cu rre n t I E BO VE B =7V Ic =0 - 50 10 μA μA Sma ll-s ig n a l Cu rre n t Ga in hFE V CE =10V,Ic=0.1A, 10 40 - Ic =0.5A , I B =0.1A - 1.2 V - 1.1 V Co lle c to r-Emitte r Sa tu ra tio n Vo lta g e Ba s e -Emitte r Sa tu ra tio n Vo lta g e VCE (s a t) V BE (sat) Ic=0.5A, I B =0.1A Fa ll T ime tf Ic =1A - 0.7 μS Sto ra g e T ime ts I B1 =-1 I B2 =0.2A - 3 μS Fre q e n c y Ch a ra c te ris tic s fT VCE=10V, IC=0.1A, f=1MHz 4 - M Hz Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected]