SLUS599 − JUNE 2004 FEATURES D Up to 100-V Overvoltage Protection D 6.9-V Overvoltage Shutdown Threshold D 3.0-V Undervoltage Shutdown Threshold D Overvoltage Turn-Off Time Less than 1.0 µs D External N-Channel MOSFET Driven by D D D D DESCRIPTION Internal Charge Pump 1-mA Maximum Static Supply Current 5-Pin SOT−23 Package −40_C to 85_C Ambient Temperature Range 2.5-kV Human-Body-Model, 500-V CDM Electrostatic Discharge Protection APPLICATIONS D Cellular Phones D PDAs D Portable PCs D Media Players D Digital Cameras D GPS The TPS2400 overvoltage protection controller is used with an external N-channel MOSFET to isolate sensitive electronics from destructive voltage spikes and surges. It is specifically designed to prevent large voltage transients associated with automotive environments (load dump) from damaging sensitive circuitry. When potentially damaging voltage levels are detected by the TPS2400 the supply is disconnected from the load before any damage can occur. Internal circuitry includes a trimmed band-gap reference, oscillator, zener diode, charge pump, comparator, and control logic. The TPS2400 is designed for use with an external N-channel MOSFET which are readily available in a wide variety of voltages. FUNCTIONAL BLOCK DIAGRAM VIN 5 High= Closed 8V Internal Rail 8V Enable Charge Pump UVLO + 1.15 V 5 µA OVLO 4 GATE + GND 2 18 V !" #$ # % & ## '($ # ) # "( "# ) "" $ Copyright 2004, Texas Instruments Incorporated www.ti.com 1 SLUS599 − JUNE 2004 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted)(1) TPS2400 Input voltage range, VIN VIN GATE (continuous) −0.3 to 110 Output voltage range, VOUT GATE (transient, < 10 µs, Duty Cycle < 0.1%) −0.3 to 25 UNIT −0.3 to 22 Continuous total power dissipation V See dissipation rating table Operating junction temperature range, TJ −40 to 125 Operating free-air temperature range, TA −40 to 85 Storage temperature range, Tstg −65 to 150 Lead temperature soldering 1, 6 mm (1/16 inch) from case for 10 seconds °C 260 (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute−maximum−rated conditions for extended periods may affect device reliability. All voltages are with respect to GND. DISSIPATION RATINGS PACKAGE TA < 25°C DERATING FACTOR TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING SOT−23 285 mW 2.85 mW/°C 155 mW 114 mW RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT Supply voltage at VIN 3.1 6.8 V Operating junction temperature −40 125 °C ELECTROSTATIC DISCHARGE (ESD) PROTECTION MIN Human Body Model 2.5 CDM 0.5 ORDERING INFORMATION TA = TJ −40°C to 85°C PACKAGED DEVICES SOT23−5 (DBV) QUANTITY PER REEL TPS2400DBVR 3000 TPS2400DBVT 500 DBV PACKAGE (TOP VIEW) 2 VIN GATE 5 4 1 2 N/C GND 3 N/C www.ti.com MAX UNIT kV SLUS599 − JUNE 2004 ELECTRICAL CHARACTERISTICS TA = −40°C to 85°C, TJ = −40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT II(VIN) Input supply current, VIN UVLO(upper) UVLO(hyst) Undervoltage lockout upper threshold OVP(upper) OVP(hyst) Overvoltage protection upper threshold VI(VIN) = 3.1 V VI(VIN) = 5.0 V 65 110 95 180 VI(VIN) = 6.5 V VI(VIN) = 100 V 135 220 µA A 550 1000 VI(VIN) rising 2.9 3.0 3.1 V 85 100 115 mV VI(VIN) rising 6.7 6.9 7.1 V 135 150 165 mV 10 A µA 600 mA Undervoltage lockout hysteresis Overvoltage protection hysteresis GATE DRIVE IOSOURCE(gate) Gate sourcing current IOSINK(gate) Gate sinking current(1) VOH(gate) VOHMAX(gate) VOL(gate) TON(prop) TON(rise) TOFF Gate output high voltage Gate output high maximum voltage Gate output low voltage Gate turn-on propogation delay, (50% VI(vin) to VO(gate) = 1 V, RLOAD = 10 MΩ) Gate turn-on rise time, (VO(gate) = 1 V to 90% VO(gate) , RLOAD = 10 MΩ) Turn-off time, (50% VI(VIN) step to VO(GATE) = 6.9 V, RLOAD = 10 meg Ω) VI(VIN) = 3.1 V, VO(gate) = 7 V VI(VIN) = 5 V, VO(gate) = 10 V 3 VI(VIN) = 7.2 V, VO(gate) = 15 V VI(VIN) = 3.1 V, IOSOURCE(gate) = 1.0 µA 350 10 12 VI(VIN) = 5 V, IOSOURCE(gate) = 1.5 µA VI(VIN) = 6.5 V, IOSOURCE(gate) = 1.5 µA 16 19 16 20 IOSOURCE(gate) = 0 µA VI(VIN) = 7.2 V, IOSINK(gate) = 50 mA 485 1.0 VI(VIN) stepped from 0 V to 5 V, CLOAD = 1 nF 0.1 0.6 CLOAD = 10 nF 0.9 3 VI(VIN) stepped from 0 V to 5V, CLOAD = 1 nF 1.5 6 CLOAD = 10 nF 15 55 VI(VIN) stepped from 6 V to 8 V, CLOAD = 1 nF CLOAD = 10 nF V 20 ms 0.25 µs 0.5 (1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. www.ti.com 3 SLUS599 − JUNE 2004 TERMINAL FUNCTIONS Terminals Name No. I/O Description GATE 4 O Output gate drive for an external N-channel MOSFET. GND 2 − Ground NC 1 − NC 3 − VIN 5 I No internal connection Input voltage DETAILED DESCRIPTION Undervoltage and Overvoltage Comparators and Logic When the comparators detect that VCC is within the operating window, the GATE output is driven high to turn on the external N-channel MOSFET. When VCC goes above the set overvoltage level, or below the set undervoltage level, the GATE output is driven low. Charge pump An internal charge pump supplies power to the GATE drive circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. Zener Diodes Limit internal power rails to 8.0 V and GATE output to 18 V. Shut-Off MOSFET When an undervoltage or overvoltage event occurs, this MOSFET is turned on to pull down the gate of the external N-channel MOSFET, thus isolating the load from the incoming transient. IIN FDC3616N VIN IOUT VOUT 5 VIN GATE 4 TPS2400 GND 2 UDG−04056 Figure 1. Application Diagram 4 www.ti.com SLUS599 − JUNE 2004 APPLICATION INFORMATION Overvoltage Protection An overvoltage condition is commonly created in these situations. D Unplugging a wall adapter from an AC outlet. Energy stored in the transformer magnetizing inductance is released and spikes the output voltage. D D D D Powering an appliance with the wrong voltage adapter (user error) Automotive load dump due to ignition, power windows, or starter motor (for example) An AC power-line transient Power switch contact bounce (causes power supply/distribution inductive kick), (See Figure 2) Many electronic appliances use a transient voltage suppressor (TVS) for overvoltage protection as shown in Figure 2. The TVS is typically a metal-oxide varister (MOV) or Transzorb. The former is a non-linear resistor with a soft turn-on characteristic whereas the latter is a large junction zener diode with a very sharp turn-on characteristic. These devices have high pulse-power capability and pico-second response time. A TVS clamps the load voltage to a safe level so the load operates uninterrupted in the presence of power supply output-voltage spikes. But in the event of a voltage surge, fuse F2 blows and must be replaced to restore operation. LS + RS F1 S1 VS F2 TVS Power Supply LOAD Appliance UDG−04057 Figure 2. Load Protection Using Transient Voltage Suppressor Clamps The TPS2400 circuit in Figure 3 protects the load from an overvoltage, not by clamping the load voltage like a TVS, but by disconnecting the load from the power supply. The circuit responds to an overvoltage in less than 1 µs and rides out a voltage surge without blowing fuse F2. Note that the voltage surge can be of indefinite duration. The load can see a voltage spike of up to 1 µs, the amount of time it takes the TPS2400 to disconnect the load from the power supply. A low-power zener diode D2 can be used to clamp the load voltage to a safe level. In most cases, diode D2 is not necessary since the load bypass capacitor (not shown) forms a low-pass filter with resistor RS and inductor LS to significantly attenuate the spike. www.ti.com 5 SLUS599 − JUNE 2004 APPLICATION INFORMATION When the TPS2400 disconnects the load from the power supply, the power-supply output-voltage spikes as the stored energy in inductor LS is released. A zener diode D1 or a small ceramic capacitor can be used to keep the voltage spike at a safe level. LS RS F1 S1 F2 Q1 5 + U1 TPS2400 VS D1 (Optional) 4 LOAD D2 (Optional) 2 Power Supply Appliance UDG−04058 Figure 3. TPS2400 Application Block Diagram Controlling the Load Inrush-Current Figure 4 is a simplified representation of an appliance with a plug-in power supply (e.g., wall adapter). When power is first applied to the load in Figure 4, the large filter capacitor CLOAD acts like a short circuit, producing an immediate inrush-current that is limited by the power-supply output resistance and inductance, RS and LS, respectively. This current can be several orders of magnitude greater than the steady-state load current. The large inrush current can damage power connectors P1 and J1 and power switch S1, and stress components. Increasing the power-supply output resistance and inductance lowers the inrush current. However, the former increases system power-dissipation and the latter decreases connector and switch reliability by encouraging the contacts to arc when they bounce. LS + RS F1 J1 P1 VS S1 F2 CLOAD Power Supply LOAD Appliance UDG−04059 Figure 4. Power-Supply Output Resistance and Inductance Circuit Model 6 www.ti.com SLUS599 − JUNE 2004 APPLICATION INFORMATION The TPS2400 circuit in Figure 5 limits the inrush current without these draw backs. The TPS2400 charges the transistor Q1 gate capacitance CG with a 5-µA source when Q1 is commanded to turn on. Transistor Q1 is wired as a source follower so the gate-voltage slew rate and the load-voltage slew rate are identical and equal to ēV L 5 mA + ēt CG (1) The corresponding inrush current is: I INRUSH [ C L ǒ Ǔ ēV L CL + ēt CG 5 mA (2) An external capacitor and a series 1-kΩ resistor can be connected to the gate of Q1 and ground to reduce inrush current further. In this case, the parameter CG in equations 1 and 2 is the sum of the internal and external FET gate capacitance. The 1-kΩ resistor decouples the external gate capacitor so the TPS2400 can rapidly turn off transistor Q1 in response to an overvoltage condition. LS RS F1 J1 P1 S1 Q1 F2 5 U1 TPS2400 + D1 (Optional) 4 CLOAD LOAD 2 Power Supply Appliance UDG−04060 Figure 5. Turn-On Voltage Slew Rate Control Using the TPS2400 www.ti.com 7 SLUS599 − JUNE 2004 TYPICAL CHARACTERISTICS RLOAD = 50 Ω BW = 20 MHz VIN (1 V/div) VOUT (1 V/div) t − Time − 200 µs/div Figure 6. Output Turn-On Response VIN VOUT S1 Q1 FDC3616N 5 VIN + 5V VIN1 U1 TPS2400 GATE GND 2 50 Ω RLOAD 4 VGATE UDG−04062 Figure 7. Output Turn-On Response Test Circuit 8 www.ti.com SLUS599 − JUNE 2004 TYPICAL CHARACTERISTICS RLOAD = 50 Ω BW = 20 MHz VIN (2 V/div) VO VOUT (2 V/div) (2 V/div) VG VGATE VIN VGATE (5 V/div) t − Time − 40 ns/div Figure 8. Output Turn-Off Response VIN VOUT D1 1N5818 Q1 FDC3616N S1 + VIN1 5V + VIN2 10 V 5 U1 TPS2400 2 50 Ω RLOAD 4 VGATE UDG−04061 Figure 9. Output Turn-Off Response Test Circuit www.ti.com 9 SLUS599 − JUNE 2004 TYPICAL CHARACTERISTICS INPUT SUPPLY CURRENT vs JUNCTION TEMPERATURE 160 IIN(VIN) − Input Supply Current − µA 800 VIN is within the GATE Enable Range VVIN > VOVP VIN= 6.5 V IIN(VIN) − Input Supply Current − µA 180 INPUT SUPPLY CURRENT vs JUNCTION TEMPERATURE 140 120 VIN= 5.0 V 100 VIN= 3.1 V 80 60 40 VIN= 75 V 600 VIN= 50 V 500 VIN= 25 V 400 VIN= 10 V 300 200 100 20 0 −50 0 50 100 0 −50 150 TJ − Junction Temperature − °C 0 150 GATE SOURCING CURRENT vs GATE VOLTAGE 8 8 TJ = 125°C VIN = 3.1 V 7 VIN = 5 V 7 IGATE − Gate Sourcing Current − µA IGATE − Gate Sourcing Current − µA 100 Figure 11 GATE SOURCING CURRENT vs GATE VOLTAGE TJ = 125°C 50 TJ − Junction Temperature − °C Figure 10 TJ = 25°C 6 5 TJ = −40°C 4 3 2 TJ = 25°C 6 TJ = −40°C 5 4 3 2 0 5 10 VGATE − Gate Voltage − V 15 Figure 12 10 VIN= 100 V 700 0 5 10 15 VGATE − Gate Voltage − V Figure 13 www.ti.com 20 SLUS599 − JUNE 2004 TYPICAL CHARACTERISTICS GATE OUTPUT VOLTAGE vs INPUT SUPPLY VOLTAGE GATE SINKING CURRENT vs JUNCTION TEMPERATURE 600 20 −40°C ≤ TJ ≤ 125°C 18 550 VO(GATE) − Gate Output Voltage − V IOSINKGATE) − Gate Sinking Current − mA VGATE= 15 V 500 450 400 350 16 14 12 10 8 6 4 2 300 −50 0 0 50 100 2 150 TJ − Junction Temperature − °C 4 3 TURN-OFF TIME to VGATE = 6.9 V vs JUNCTION TEMPERATURE TURN-OFF TIME to VGATE = 6.9 V vs JUNCTION TEMPERATURE 700 VIN Step 3.3 V to 8 V tOFF − Turn-Off Time − ns tOFF − Turn-Off Time − ns VIN Step 5 V to 8 V 200 0 −50 VIN Step 3.3 V to 8 V 600 400 100 8 7 Figure 15 500 300 6 VVIN − Input Supply Voltage − V Figure 14 600 5 500 400 300 200 VIN Step 6 V to 8 V 100 VIN Step 6 V to 8 V CLOAD = 1 nF 0 VIN Step 5 V to 8 V 50 100 150 0 −50 CLOAD = 10 nF 0 50 100 150 TJ − Junction Temperature − °C TJ − Junction Temperature − °C Figure 16 Figure 17 www.ti.com 11 SLUS599 − JUNE 2004 12 www.ti.com PACKAGE OPTION ADDENDUM www.ti.com 4-Mar-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS2400DBVR ACTIVE SOT-23 DBV 5 3000 None CU NIPDAU Level-1-235C-UNLIM TPS2400DBVT ACTIVE SOT-23 DBV 5 250 None CU NIPDAU Level-1-235C-UNLIM Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. None: Not yet available Lead (Pb-Free). Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens, including bromine (Br) or antimony (Sb) above 0.1% of total product weight. (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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