NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 2N6724 2N6725 ISSUE 1 MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6724 2N6725 50 60 UNIT Collector-Emitter Voltage VCEO 40 50 Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C V V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL 2N6724 Collector-Base Breakdown Voltage V(BR)CBO 50 UNIT CONDITIONS. 60 V IC=1µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 50 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 1.0 1.0 µA µA VCB=30V, IE=0 VCB=40V, IE=0 Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 1.0 1.5 V V IC=200mA, IB=2mA* IC=1A, IB=2mA* Base-Emitter Saturation Voltage VBE(sat) 2.0 2.0 V IC=1A, IB=2mA* Base-Emitter Turn-On Voltage VBE(on) 2.0 2.0 V IC=1A, VCE=5V* Static Forward Current Transfer Ratio hFE Collector Base Capacitance CCB MIN. 25K 15K 4K 2N6725 MAX. MIN. 40K 10 25K 15K 4K MAX. IC=200mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* 40K 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-7 VCB=10V, f=1MHz