SOT23 PNP SILICON HIGH SPEED SWITCHING DIODE BAS16 BAS16 ISSUE 3 FEBRUARY 1996 PIN CONFIGURATION DIM E C B Millimeters Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 NOM 0.075 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N NOM 0.95 1 Inches NOM 0.37 E C B PARTMARKING DETAILS BAS16 A6 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Continuous Reverse Voltage VR 75 Repetative Reverse Voltage VRRM 85 V Repetative Peak Forward Current IFRM 250 mA 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PARAMETER SYMBOL Forward Voltage VF 715 855 1000 1250 Reverse Current IR 30 1 50 Forward Recovery Voltage VFR 1.75 Diode Capacitance Cd 2 pF f=1MHz, VR=0 Reverse Recovery Time trr 6 ns IF=10mA, IRM=10mA RL=100Ω , Irr=1mA (1) (2) MIN. TYP. MAX. UNIT CONDITIONS. IF=1mA IF=10mA IF=50mA IF=150mA nA mA VR=25V, Tj=150°C VR=75V VR=75V, Tj=150°C Switched to IF=10mA, tr=20ns Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V SOT23 PNP SILICON HIGH SPEED SWITCHING DIODE BAS16 BAS16 ISSUE 3 FEBRUARY 1996 PIN CONFIGURATION DIM E C B Millimeters Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 NOM 0.075 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N NOM 0.95 1 Inches NOM 0.37 E C B PARTMARKING DETAILS BAS16 A6 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Continuous Reverse Voltage VR 75 Repetative Reverse Voltage VRRM 85 V Repetative Peak Forward Current IFRM 250 mA 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PARAMETER SYMBOL Forward Voltage VF 715 855 1000 1250 Reverse Current IR 30 1 50 Forward Recovery Voltage VFR 1.75 Diode Capacitance Cd 2 pF f=1MHz, VR=0 Reverse Recovery Time trr 6 ns IF=10mA, IRM=10mA RL=100Ω , Irr=1mA (1) (2) MIN. TYP. MAX. UNIT CONDITIONS. IF=1mA IF=10mA IF=50mA IF=150mA nA mA VR=25V, Tj=150°C VR=75V VR=75V, Tj=150°C Switched to IF=10mA, tr=20ns Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V