BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 SOT23 SILICON HIGH SPEED SWITCHING DIODE ISSUE 2 JANUARY 1995 SWITCHING TIME TEST DATA PIN CONFIGURATION 1 Recovery Time Equivalent Test Circuit Pulse Generator DUT 3 10% SOT23 ABSOLUTE MAXIMUM RATINGS. tp(tot) 90% 3 PARTMARKING DETAILS BAS19 A8 BAS20 A81 BAS21 A82 Sampling Oscilloscope RIN =50Ω RS =50Ω V 2 1 PARAMETER tp +IF trr t IR* 90% Input Signal Output Signal Reverse Pulse Duration Input Signal tp 100ns Total Pulse Duration tp(tot) 2µ s Oscilloscope Duty Factor δ 0.0025 Rise Time tr 0.35ns Rise Time of Reverse Pulse tr 0.6ns Circuit Capacitance* C <1pF SYMBOL BAS19 BAS20 BAS21 UNIT V Continuous Reverse Voltage VR 100 150 200 Repetative Peak Reverse Voltage VRRM 120 200 250 Average Forward Rectified Current IF(AV) 200 mA Forward Current IF 200 mA Repetative Peak Forward Current IFRM 625 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Reverse Breakdown Voltage V(BR) MIN. TYP. MAX. UNIT CONDITIONS. BAS19 120 V IR=100µ A (1) BAS20 200 V IR=100µ A (1) BAS21 250 V IR=100µ A (2) nA VR=VRmax VR=VRmax, TJ=150°C IR 100 100 Static Forward Voltage VF 1.00 1.25 Reverse Current Differential Resistance rdiff Diode Capacitance Cd Reverse Recovery Time trr 5 µA IF=100mA IF=200mA Ω IF=10mA 5 pF f=1MHz 50 ns IF=30mA to IR=30mA RL=10Ω measured at IR=3mA Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V Spice parameter data is available upon request for this device (1) (2) PAGE NO BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 SOT23 SILICON HIGH SPEED SWITCHING DIODE ISSUE 2 JANUARY 1995 SWITCHING TIME TEST DATA PIN CONFIGURATION 1 Recovery Time Equivalent Test Circuit Pulse Generator DUT 3 10% SOT23 ABSOLUTE MAXIMUM RATINGS. tp(tot) 90% 3 PARTMARKING DETAILS BAS19 A8 BAS20 A81 BAS21 A82 Sampling Oscilloscope RIN =50Ω RS =50Ω V 2 1 PARAMETER tp +IF trr t IR* 90% Input Signal Output Signal Reverse Pulse Duration Input Signal tp 100ns Total Pulse Duration tp(tot) 2µ s Oscilloscope Duty Factor δ 0.0025 Rise Time tr 0.35ns Rise Time of Reverse Pulse tr 0.6ns Circuit Capacitance* C <1pF SYMBOL BAS19 BAS20 BAS21 UNIT V Continuous Reverse Voltage VR 100 150 200 Repetative Peak Reverse Voltage VRRM 120 200 250 Average Forward Rectified Current IF(AV) 200 mA Forward Current IF 200 mA Repetative Peak Forward Current IFRM 625 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Reverse Breakdown Voltage V(BR) MIN. TYP. MAX. UNIT CONDITIONS. BAS19 120 V IR=100µ A (1) BAS20 200 V IR=100µ A (1) BAS21 250 V IR=100µ A (2) nA VR=VRmax VR=VRmax, TJ=150°C IR 100 100 Static Forward Voltage VF 1.00 1.25 Reverse Current Differential Resistance rdiff Diode Capacitance Cd Reverse Recovery Time trr 5 µA IF=100mA IF=200mA Ω IF=10mA 5 pF f=1MHz 50 ns IF=30mA to IR=30mA RL=10Ω measured at IR=3mA Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V Spice parameter data is available upon request for this device (1) (2) PAGE NO