BAS70-04 BAS70-05 BAS70-06 SOT23 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - JULY 1995 ✪ 1 1 . 1 2 1 3 3 2 2 3 2 SOT23 3 SERIES PAIR COMMON CATHODE COMMON ANODE Device Type: BAS70-04 Device Type: BAS70-05 Device Type: BAS70-06 Partmarking Detail: 2Z Partmarking Detail: 2Z5 Partmarking Detail: 1Z ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg VALUE UNIT 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Breakdown Voltage VBR 70 Reverse Leakage Current IR Forward Voltage VF Forward Current IF Capacitance CT Effective Minority Lifetime (1) τ MAX. UNIT CONDITIONS. V IR=10µ A 200 nA VR=50V 410 mV IF=1mA mA VF=1V 2.0 pF f=1MHz, VR=0 100 ps f=54MHz, Ipk= 20mA (Krakauer Test Method) 15 (1) Sample Test For typical characteristics graphs see ZC2800E datasheet. 3-3