SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2001 PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ ✪ COMPLEMENTARY TYPE – BC807 BC817 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO 50 V V CEO 45 Emitter-Base Voltage V V EBO 5 V Peak Pulse Current I CM 1 A Continuous Collector Current IC 500 mA Base Current IB 100 mA Peak Base Current I BM 200 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector Cut-Off Current I CBO MIN. TYP. MAX. UNIT CONDITIONS. 0.1 5 µA µA V CB=20V, I E=0 V CB=20V, I E=0, T amb=150°C Emitter Cut-Off Current I EBO 10 µA V EB=5V, I C=0 Collector-Emitter Saturation Voltage V CE(sat) 700 mV I C=500mA, I B=50mA* Base-Emitter Saturation Voltage V BE(on) 1.2 V I C=500mA, V CE=1V* Static Forward Current Transfer Ratio h FE BC81716 100 250 I C=100mA, V CE=1V* BC81725 160 400 I C=100mA, V CE=1V* BC81740 250 600 I C=100mA, V CE=1V* All bands I C=500mA, V CE=1V* 40 Transition Frequency fT 200 MHz I C=10mA, V CE=5V f=35MHz Output Capacitance C obo 5.0 pF V CB=10V, f=1MHz *Measured under pulsed conditions. TBA