SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCP68 ISSUE 3 FEBRUARY 1996 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE BCP69 PARTMARKING DETAIL BCP68 BCP68 25 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb =25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 25 V IC=10µ A V(BR)CEO 20 V IC= 30mA * Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µ A Collector Cut-Off Current ICBO 100 10 µA nA VCB=25V VCB=25V, Tamb=150°C Emitter Cut-Off Current IEBO 10 µA VEB=5V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V V IC=5A, VCE=10V* IC=1A, VCE=1V* 0.6 50 Static Forward Current hFE 63 BCP68 Transfer Ratio BCP68-25 160 250 Transition Frequency 100 fT IC=5mA, VCE=10V* IC=500mA, VCE=1V* IC=500mA, VCE=1V* 400 400 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT449 datasheet. 3 - 19 IC=100mA, VCE=5V, f=100MHz