SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCP69 ISSUE 3 FEBRUARY 1996 ✪ FEATURES * For AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE BCP68 PARTMARKING DETAIL BCP69 BCP69 25 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb =25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. -25 V IC=-10µ A V(BR)CEO -20 V IC=- 30mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µ A Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Turn-On Voltage VBE(on) - 0.6 50 Static Forward Current hFE 63 BCP69 Transfer Ratio BCP69-25 160 250 Transition Frequency 100 fT MAX. -100 -10 µA nA VCB=-25V VCB=-25V, Tamb=150°C -10 µA VEB=-5V -0.5 V IC=-1A, IB=-100mA* -1.0 V V IC=-5A, VCE=-10V* IC=-1A, VCE=-1V* IC=-5mA, VCE=-10V* IC=-500mA, VCE=-1V* IC=-500mA, VCE=-1V* 400 400 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT549 datasheet. 3 - 20 IC=-100mA, VCE=-5V, f=100MHz