SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 5 V Continuous Collector Current IC 800 mA Peak Collector Current(10ms) I CM 1000 mA Base Current IB 100 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C TBA BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V (BR)CEO 45 V I CEO=10mA V (BR)CES 75 V IC=10 µ A Emitter-Base Breakdown Voltage V (BR)EBO 5 V I EBO =10 µ A Collector-Emitter Cut-off Current I CES 20 20 nA µA V CES = 45V VCES = 45V , Tamb=150°C Emitter-Base Cut-Off Current I EBO 20 nA V EBO =4V Collector-Emitter Saturation Voltage V CE(sat) 0.3 V 0.7 V IC=100mA, IB = 10mA IC= 500mA, IB = 50mA* Base-Emitter Saturation Voltage V BE(sat) 2 IC=500mA, IB=50mA* Static Forward Current Transfer BCW66F h FE BCW66G h FE BCW66H h FE Transition Frequency fT Output Capacitance C obo Input Capacitance C ibo Noise Figure N Switching times: Turn-On Time Turn-Off Time t on t off 75 100 35 TYP. MAX. UNIT CONDITIONS. 160 250 110 160 60 250 400 180 250 100 350 630 100 I C= 10mA, V CE = 1V IC=100mA, VCE= 1V* IC=500mA, VCE = 2V* I C= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* I C= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* MHz I C =20mA, V CE =10V f = 100MHz 8 2 12 pF VCB =10V, f =1MHz 80 pF VEB =0.5V, f =1MHz 10 dB IC= 0.2mA, VCE = 5V RG =1kΩ 100 400 ns ns I C=150mA I B1=- I B2 =15mA R L=150 Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. TBA V