SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5316 ISSUE 4 – MARCH 2001 C COMPLIMENTARY TYPE – BCX5616 PARTMARKING DETAIL – AL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO -100 V Collector-Emitter Voltage V CEO -80 V Emitter-Base Voltage V EBO Peak Pulse Current I CM Continuous Collector Current IC Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg VALUE UNIT -5 V -1.5 A -1 A 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown voltage V (BR)CBO -100 TYP. MAX. UNIT V CONDITIONS. IC =-100 µ A Collector-Emitter Breakdown Voltage V (BR)CEO -80 V IC =-10mA Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E =-10 µ A Collector Cut-Off Current I CBO -0.1 -20 µA µA V CB =-30V V CB =-30V, T amb =150°C Emitter Cut-Off Current I EBO -10 µA V EB =-4V Collector-Emitter Saturation Voltage V CE(sat) -0.5 V I C =-500mA, I B =-50mA* Base-Emitter Turn-On Voltage V BE(on) -1.0 V I C =-500mA, V CE =-2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C obo 25 100 25 I C =-5mA, V CE =-2V* I C =-150mA, V CE =-2V* I C =-500mA, V CE =-2V* 250 150 25 *Measured under pulsed conditions. TBA MHz I C =-50mA, V CE =-10V, f=100MHz pF V CB =-10V, f=1MHz