SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown voltage V (BR)CBO 100 TYP. V IC =100 µ A Collector-Emitter Breakdown Voltage V (BR)CEO 80 V IC =10mA Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E =10 µ A Collector Cut-Off Current I CBO 0.1 20 µA µA V CB =30V V CB =30V, T amb =150°C Emitter Cut-Off Current I EBO 20 nA V EB =4V Collector-Emitter Saturation Voltage V CE(sat) 0.5 V I C =500mA, I B =50mA* Base-Emitter Turn-On Voltage V BE(on) 1.0 V I C =500mA, V CE =2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C obo 25 100 25 MAX. UNIT CONDITIONS. I C =5mA, V CE =2V* I C =150mA, V CE =2V* I C =500mA, V CE =2V* 250 150 15 *Measured under pulsed conditions. TBA MHz I C =50mA, V CE =10V, f=100MHz pF V CB =10V, f=1MHz