SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX68 ISSUE 2 – FEBRUARY 1995 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX69 PARTMARKING DETAIL – BCX68 – CE BCX68-16 – CC BCX68-25 – CD E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage V CBO 25 Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown voltage V (BR)CBO 25 TYP. MAX. UNIT V I C =100µA CONDITIONS. Collector-Emitter Breakdown Voltage V (BR)CEO 20 V I C =10mA Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E =100µA Collector Cut-Off Current I CBO 0.1 10 µA µA V CB =25V V CB =25V, T a =150°C Emitter Cut-Off Current I EBO 10 µA V EB =5V Collector-Emitter Saturation Voltage V CE(sat) 0.5 V I C =1A, I B =100mA* Base-Emitter Turn-On Voltage V BE(on) 1.0 V I C =1A, V CE =1V* Static Forward Current Transfer Ratio h FE 50 85 60 BCX68-16 100 BCX68-25 160 Transition Frequency fT Output Capacitance C obo IC IC IC IC IC 375 250 250 400 100 25 MHz I C =100mA, V CE =5V, f=100MHz pF V CB =10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT449 datasheet. 3 - 36 =5mA, V CE =10V =500mA, V CE =1V =1A, V CE =1V* =500mA, V CE =1V* =500mA, V CE =1V