SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BSR42 ✪ ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – BSR32 PARTMARKING DETAIL – AR3 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 90 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Base Current IB 100 mA Power Dissipation at T amb =25°C P tot Operating and Storage Temperature Range T j:T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 90 MAX. V I C=100 µ A Collector-Emitter Breakdown Voltage V (BR)CEO 80 V I C=10mA Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E=10 µ A Collector Cut-Off Current I CBO 100 50 nA µA V CB=60V V CB=60V, T amb=125°C Collector-Emitter Saturation Voltage V CE(sat) 0.25 0.5 V V I C =150mA, I B=15mA I C =500mA, I B=50mA Base-Emitter Saturation Voltage V BE(sat) 1.0 1.2 V V I C =150mA, I B=15mA I C =500mA, I B=50mA Static Forward Current Transfer Ratio h FE 10 40 30 I C =100 µ A, V CE=5V I C =100mA, V CE=5V I C =500mA, V CE=5V 120 Output Capacitance C obo 12 pF Input Capacitance C ibo 90 pF V EB =0.5V, f=1MHz Transition Frequency fT MHz I C=50mA, V CE=10V f =35MHz Turn-On Time T on 250 ns Turn-Off Time T off 1000 ns V CC =20V, I C =100mA I B1 =-I B2 =-5mA 100 *Measured under pulsed conditions. For typical characteristics graphs see FMMT493 datasheet. TBA V CB =10V, f =1MHz